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SEMICONDUCTOR DEVICE

  • US 20090152627A1
  • Filed: 12/13/2007
  • Published: 06/18/2009
  • Est. Priority Date: 12/13/2007
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a semiconductor layer of a first general conductivity type;

    a body layer of a second general conductivity type formed in the semiconductor layer and comprising a channel region;

    a source layer formed in the body layer;

    a gate electrode disposed on the body layer;

    a first well layer of the first general conductivity type formed in the semiconductor layer;

    a drain layer of the first general conductivity type formed in the first well layer;

    a first withstand voltage boosting layer of the second general conductivity type configured to improve a withstand voltage of the semiconductor device, the first boosting layer being formed in a portion of the semiconductor layer operating as a drift region extending from the drain layer to the body layer;

    a second well layer of the first general conductivity type configured to lower an on-resistance and formed in the semiconductor layer under the gate electrode; and

    a third well layer of the first general conductivity type configured to lower the on-resistance and formed in the drift region so that the second and third well layers are physically separated from each other.

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