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Materials, Systems and Methods for Optoelectronic Devices

  • US 20090152664A1
  • Filed: 04/18/2008
  • Published: 06/18/2009
  • Est. Priority Date: 04/18/2007
  • Status: Active Grant
First Claim
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1. A photodetector comprising:

  • an integrated circuit; and

    at least two optically sensitive layers, a first optically sensitive layer and a second optically sensitive layer, the first optically sensitive layer over at least a portion of the integrated circuit and the second optically sensitive layer over the first optically sensitive layer;

    wherein each optically sensitive layer is interposed between two electrodes, the electrodes including a respective first electrode and a respective second electrode;

    wherein the integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers, wherein the signal is related to the number of photons received by the respective optically sensitive layer.

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