Semiconductor device
First Claim
1. A semiconductor device comprising:
- a semiconductor substrate;
a plurality of insulating interlayers formed over said semiconductor substrate, and containing a plurality of interconnect layers;
an inductor formed over said semiconductor substrate while placing at least one of said insulating interlayers in between; and
a guard ring surrounding said inductor in a plan view, so as to isolate said inductor from other regions,wherein said guard ring comprises;
an annular impurity diffused layer provided in the surficial portion of said semiconductor substrate; and
an annular electro-conductor connected to said impurity diffused layer, and extended across said plurality of interconnect layers in said plurality of insulating interlayers, up to a layer having a level of height not lower than the layer having said inductor provided therein.
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Accused Products
Abstract
A semiconductor device contains a semiconductor substrate, an insulating film formed on the semiconductor substrate, an inductor formed over the semiconductor substrate while placing a portion of the insulating film in between, and a guard ring surrounding the inductor in a plan view, and isolating the inductor from other regions, wherein the guard ring contains an annular impurity diffused layer provided in the surficial portion of the semiconductor substrate, and an annular electro-conductor connected to the impurity diffused layer, and extended across a plurality of interconnect layers, up to a layer having a level of height not lower than the layer having the inductor provided therein.
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Citations
9 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate; a plurality of insulating interlayers formed over said semiconductor substrate, and containing a plurality of interconnect layers; an inductor formed over said semiconductor substrate while placing at least one of said insulating interlayers in between; and a guard ring surrounding said inductor in a plan view, so as to isolate said inductor from other regions, wherein said guard ring comprises; an annular impurity diffused layer provided in the surficial portion of said semiconductor substrate; and an annular electro-conductor connected to said impurity diffused layer, and extended across said plurality of interconnect layers in said plurality of insulating interlayers, up to a layer having a level of height not lower than the layer having said inductor provided therein. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification