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Semiconductor device

  • US 20090152674A1
  • Filed: 11/24/2008
  • Published: 06/18/2009
  • Est. Priority Date: 12/14/2007
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a semiconductor substrate;

    a plurality of insulating interlayers formed over said semiconductor substrate, and containing a plurality of interconnect layers;

    an inductor formed over said semiconductor substrate while placing at least one of said insulating interlayers in between; and

    a guard ring surrounding said inductor in a plan view, so as to isolate said inductor from other regions,wherein said guard ring comprises;

    an annular impurity diffused layer provided in the surficial portion of said semiconductor substrate; and

    an annular electro-conductor connected to said impurity diffused layer, and extended across said plurality of interconnect layers in said plurality of insulating interlayers, up to a layer having a level of height not lower than the layer having said inductor provided therein.

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