INTEGRATED MATCHING NETWORKS AND RF DEVICES THAT INCLUDE AN INTEGRATED MATCHING NETWORK

• US 20090152698A1
• Filed: 02/23/2009
• Published: 06/18/2009
• Est. Priority Date: 10/25/2006
• Status: Active Grant

• Current Assignee: NXP USA, Inc. (NXP Semiconductors NV)
• Original Assignee: Freescale Semiconductor, Inc. (NXP Semiconductors NV)
• Inventors: Miller, Melvy F., Foerstner, Juergen A.
• Granted Patent: US 7,667,334 B2
• Time in Patent Office: Days
• US Class Current: 257/678
• CPC Class Codes: H01L 2223/6655 Matching arrangements, e.g. arrangement of inductive and capacitive components
• CPC Class Codes: H01L 2224/16227 the bump connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/16235 the bump connector connecting to a via metallisation of the item
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/73253 Bump and layer connectors
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 25/0655 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/15192 Resurf arrangement of the internal vias
• CPC Class Codes: H01L 2924/19104 on the semiconductor or solid-state device, i.e. passive-on-chip
• CPC Class Codes: H01L 2924/3011 Impedance

Abstract

An integrated matching network includes a first die on a substrate, a second die on the substrate, and a metallization layer on the first and second dies. The second die has a capacitance, the metallization layer has an inductance, and the capacitance and inductance together provide a shunt impedance from the first die to the substrate. The integrated matching network includes a first die having a power amplifier, a second die having a capacitor, and a metal interconnect coupled to the power amplifier and the first capacitor. The metal interconnect has an inductance. The capacitor and metal interconnect form a shunt impedance.

Claims

1. An integrated matching network comprising:

a first die comprising an RF active component;

a second die comprising a first capacitor; and

a first metal interconnect coupled to the RF active component and the first capacitor, the first metal interconnect having a first inductance, wherein the first capacitor and the first inductance form a shunt impedance.

2. An integrated matching network of claim 1, further comprising:

a first bump attachment coupled to the RF active component;

a second bump attachment coupled to the first capacitor; and

wherein the metal interconnect is coupled to the first and second bump attachments, wherein the RF active component comprises a power amplifier, and wherein the first capacitor is an integrated passive device.

3. An integrated matching network of claim 1, further comprising:

a third die comprising a second capacitor coupled to the shunt impedance; and

a second metal interconnect coupled to the first metal interconnect and the second capacitor, the second metal interconnect having a second inductance, the second inductance and the second capacitor coupled to the shunt impedance forming an output impedance matching network.

4. An integrated matching network of claim 1, further comprising an inductor component coupled to the first and second dies, the inductor component comprising:

a first contact coupled to the RF active component;

a second contact coupled to the first capacitor;

a first bump attachment coupled to the first contact; and

a second bump attachment coupled to the second contact;

wherein the first metal interconnect is coupled to the first and second bump attachments.

5. An integrated matching network of claim 1, wherein the first metal interconnect has first and second opposing surfaces;

and wherein the integrated matching network further comprises;

a third die comprising a second capacitor;

an inductor component coupled to the first, second, and third dies, the inductor component comprising;

an insulating layer having first and second opposing surfaces and first and second vias, the first surface of the insulating layer coupled to the second surface of the first metal interconnect; and

a second metal interconnect coupled to the second surface of the insulating layer, the first via coupling the second metal interconnect to the second surface of the first metal interconnect;

a first bump attachment coupled to the RF active component;

a second bump attachment coupled to the first capacitor, the first surface of the first metal interconnect coupled to the first and second bump attachments; and

a third bump attachment coupled to the second capacitor, the second via coupling the second metal interconnect to the third bump attachment.

6. An integrated matching network comprising:

a first die having first and second opposing surfaces, wherein the first surface of the first die is coupled to a substrate;

a second die having first and second opposing surfaces and a capacitance, wherein the first surface of the second die is coupled to the substrate; and

an inductive component that includes an insulator substrate and a first metallization layer coupled to the insulator substrate, wherein the first metallization layer is coupled to the second surface of the first die and to the second surface of the second die, wherein the first metallization layer has an inductance, and wherein the capacitance and the inductance together provide a shunt impedance from the first die to the substrate.

7. An integrated matching network of claim 6, wherein the first die comprises an RF active component, and the second die comprises a capacitor.

8. An integrated matching network of claim 6, wherein:

the second surface of the first die is coupled to the first metallization layer with a first bump attachment; and

the second die is coupled to the first metallization layer with a second bump attachment.

9. An integrated matching network of claim 6, further comprising:

a third die coupled to the substrate and to the first die, wherein the third die is coupled to the first die with a second metallization layer.

10. An integrated matching network of claim 9, wherein:

the first metallization layer is coupled to the second metallization layer with a first via; and

the third die is coupled to the second metallization layer with a second via.

11. An integrated matching network of claim 6, further comprising:

a third die coupled to the substrate; and

wherein the inductive component comprises

the first metallization layer formed on an insulator layer;

first and second vias formed through the insulator layer; and

a second metallization layer formed on the insulator layer, wherein the first via couples the second metallization layer to the first metallization layer, and the second via couples the second metallization layer to the third die.

12. A radio frequency (RF) device having an integrated matching network, the RF device comprising:

a first substrate;

an RF active die coupled to the first substrate, the RF active die having first and second opposing surfaces, an RF active component, and an output of the RF active component, wherein the first surface of the RF active die is coupled to the first substrate;

a first integrated passive device (IPD) coupled to the first substrate, the first IPD having first and second opposing surfaces, a first capacitance incorporated therewith, and an input, wherein the first surface of the first IPD is coupled to the first substrate; and

a second substrate having a first metal interconnect formed thereon, wherein the first metal interconnect is coupled between the second surface of the die and the second surface of the first IPD in order to couple the output of the RF active component with the input of the first IPD, wherein the first metal interconnect has an inductance that is coupled in series with the first capacitance, and wherein the inductance and the first capacitance provide a matching impedance for the RF active component.

13. The RF device of claim 12, wherein the RF device has an RF ground, and wherein the first capacitance and the inductance together provide a shunt impedance from the output of the RF active component to the RF ground.

14. The RF device of claim 12, wherein the first metal interconnect is coupled to the second surface of the RF active die and the second surface of the first IPD.

15. The RF device of claim 12, further comprising:

a first bump attachment applied to the second surface of the RF active die; and

a second bump attachment applied to the second surface of the first IPD, wherein the first metal interconnect is coupled to the first and second bump attachments.

16. The RF device of claim 12, wherein the step of coupling a second substrate comprises:

a first contact formed on the second surface of the RF active die;

a first bump attachment applied to the first contact;

a second contact formed on the second surface of the first IPD; and

a second bump attachment applied to the second contact, wherein the first metal interconnect is coupled to the first and second bump attachments.

17. The RF device of claim 12, further comprising:

a second IPD coupled to the first substrate, wherein the second IPD has first and second opposing surfaces, and wherein the second substrate also is coupled to the second surface of the RF active die, the second surface of the first IPD, and the second surface of the second IPD.

18. The RF device of claim 12, further comprising:

a second IPD coupled to the first substrate, wherein the second IPD has first and second opposing surfaces, and wherein the first surface of the second IPD is coupled to the first substrate;

a first bump attachment applied to the second surface of the RF active die;

a second bump attachment applied to the second surface of the first IPD, wherein the first metal interconnect is coupled to the first and second bump attachments;

a third bump attachment applied to the second surface of the second IPD; and

a second metal interconnect coupled to the first bump attachment and the third bump attachment.

19. The RF device of claim 18, wherein the RF device has an RF ground, the first metal interconnect has a first inductance, and the second metal interconnect has a second inductance, and wherein the first inductance and the first capacitance form a shunt impedance to the RF ground, and wherein the second IPD has a second capacitance coupled to the shunt impedance to the RF ground, and wherein the second inductance and the second capacitance coupled to the shunt impedance to the RF ground together form an output impedance matching network.

20. The RF device of claim 12, further comprising:

a second IPD coupled to the first substrate, wherein the second IPD has first and second opposing surfaces, and wherein the first surface of the second IPD is coupled to the first substrate;

an insulator substrate;

a first metallization layer formed on the insulator substrate to form the first metal interconnect;

first and second vias formed through the insulator substrate; and

a second metallization layer formed on the insulator substrate, wherein the second metallization layer is coupled to the first metallization layer with the first via, and wherein the second metallization layer is coupled to the second surface of the RF active die and the second surface of the first IPD, and the first metallization layer is coupled to the second surface of the second IPD with the second via.