SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND ELECTRIC DEVICE
First Claim
1. An active matrix display device comprising:
- a thin film transistor formed over a substrate, the thin film transistor comprising;
a gate electrode;
a gate insulating film formed over the gate electrode; and
a semiconductor film comprising a metal oxide wherein the metal includes In;
an insulating film comprising an inorganic material formed on the semiconductor film; and
a pixel electrode formed on the insulating film and electrically connected to the thin film transistor.
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Accused Products
Abstract
It is an object of the present invention to simplify steps needed to process a wiring in forming a multilayer wiring. In addition, when a droplet discharging technique or a nanoimprint technique is used to form a wiring in a contact hole having a comparatively long diameter, the wiring in accordance with the shape of the contact hole is formed, and the wiring portion of the contact hole is likely to have a depression compared with other portions. A penetrating opening is formed by irradiating a light-transmitting insulating film with laser light having high intensity and a pulse high in repetition frequency. A plurality of openings having a minute contact area is provided instead of forming one penetrating opening having a large contact area to have an even thickness of a wiring by reducing a partial depression and also to ensure contact resistance.
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Citations
27 Claims
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1. An active matrix display device comprising:
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a thin film transistor formed over a substrate, the thin film transistor comprising; a gate electrode; a gate insulating film formed over the gate electrode; and a semiconductor film comprising a metal oxide wherein the metal includes In; an insulating film comprising an inorganic material formed on the semiconductor film; and a pixel electrode formed on the insulating film and electrically connected to the thin film transistor. - View Dependent Claims (2, 16, 19, 22, 25)
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3. An active matrix liquid crystal display device comprising:
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a thin film transistor formed over a substrate, the thin film transistor comprising; a gate electrode; a gate insulating film formed over the gate electrode; and a semiconductor film comprising a metal oxide wherein the metal includes In; an insulating film comprising an inorganic material formed on the semiconductor film; and a pixel electrode formed on the insulating film and electrically connected to the thin film transistor. - View Dependent Claims (4)
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5. An active matrix EL display device comprising:
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a thin film transistor formed over a substrate, the thin film transistor comprising; a gate electrode; a gate insulating film formed over the gate electrode; and a semiconductor film comprising a metal oxide wherein the metal includes In; an insulating film comprising an inorganic material formed on the semiconductor film; and a pixel electrode formed on the insulating film and electrically connected to the thin film transistor. - View Dependent Claims (6)
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7. An active matrix display device comprising:
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a thin film transistor formed over a substrate, the thin film transistor comprising; a gate electrode; a gate insulating film formed over the gate electrode; and a semiconductor film comprising a metal oxide wherein the metal includes In; an insulating film comprising a resin material formed on the semiconductor film; and a pixel electrode formed on the insulating film and electrically connected to the thin film transistor. - View Dependent Claims (8)
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9. An active matrix liquid crystal display device comprising:
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a thin film transistor formed over a substrate, the thin film transistor comprising; a gate electrode; a gate insulating film formed over the gate electrode; and a semiconductor film comprising a metal oxide wherein the metal includes In; an insulating film comprising a resin material formed on the semiconductor film; and a pixel electrode formed on the insulating film and electrically connected to the thin film transistor. - View Dependent Claims (10)
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11. An active matrix EL display device comprising:
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a thin film transistor formed over a substrate, the thin film transistor comprising; a gate electrode; a gate insulating film formed over the gate electrode; and a semiconductor film comprising a metal oxide wherein the metal includes In; an insulating film comprising a resin material formed on the semiconductor film; and a pixel electrode formed on the insulating film and electrically connected to the thin film transistor. - View Dependent Claims (12, 18, 21, 24, 27)
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13. An active matrix display device comprising:
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a thin film transistor formed over a substrate, the thin film transistor comprising; a gate electrode; a gate insulating film formed over the gate electrode; and a semiconductor film comprising a metal oxide wherein the metal includes In; an insulating film comprising a siloxane-based polymer formed on the semiconductor film; and a pixel electrode formed on the insulating film and electrically connected to the thin film transistor.
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14. An active matrix liquid crystal display device comprising:
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a thin film transistor formed over a substrate, the thin film transistor comprising; a gate electrode; a gate insulating film formed over the gate electrode; and a semiconductor film comprising a metal oxide wherein the metal includes In; an insulating film comprising a siloxane-based polymer formed on the semiconductor film; and a pixel electrode formed on the insulating film and electrically connected to the thin film transistor. - View Dependent Claims (17, 20, 23, 26)
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15. An active matrix EL display device comprising:
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a thin film transistor formed over a substrate, the thin film transistor comprising; a gate electrode; a gate insulating film formed over the gate electrode; and a semiconductor film comprising a metal oxide wherein the metal includes In; an insulating film comprising a siloxane-based polymer formed on the semiconductor film; and a pixel electrode formed on the insulating film and electrically connected to the thin film transistor.
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Specification