MEMORY ARRAYS USING NANOTUBE ARTICLES WITH REPROGRAMMABLE RESISTANCE
First Claim
1. A method of operating a two terminal nanotube memory cell comprising:
- applying a first electrical stimulus to change the resistance of a nanotube article between a first terminal and a second terminal to a relatively high resistance; and
applying a second electrical stimulus to change the resistance of the nanotube article between the first and second terminals to a relatively low resistance,wherein a relatively high resistance of the nanotube article corresponds to a first informational state of the memory cell, and wherein a relatively low resistance of the nanotube article corresponds to a second informational state of the memory cell.
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Accused Products
Abstract
A memory array includes a plurality of memory cells, each of which receives a bit line, a first word line, and a second word line. Each memory cell includes a cell selection circuit, which allows the memory cell to be selected. Each memory cell also includes a two-terminal switching device, which includes first and second conductive terminals in electrical communication with a nanotube article. The memory array also includes a memory operation circuit, which is operably coupled to the bit line, the first word line, and the second word line of each cell. The circuit can select the cell by activating an appropriate line, and can apply appropriate electrical stimuli to an appropriate line to reprogrammably change the relative resistance of the nanotube article between the first and second terminals. The relative resistance corresponds to an informational state of the memory cell.
110 Citations
18 Claims
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1. A method of operating a two terminal nanotube memory cell comprising:
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applying a first electrical stimulus to change the resistance of a nanotube article between a first terminal and a second terminal to a relatively high resistance; and applying a second electrical stimulus to change the resistance of the nanotube article between the first and second terminals to a relatively low resistance, wherein a relatively high resistance of the nanotube article corresponds to a first informational state of the memory cell, and wherein a relatively low resistance of the nanotube article corresponds to a second informational state of the memory cell. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification