METHOD OF MANUFACTURING THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY HAVING THIN FILM TRANSISTOR

• US 20090155940A1
• Filed: 11/07/2008
• Published: 06/18/2009
• Est. Priority Date: 12/18/2007
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Mobile Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: Mo, Steve Y.G., Lee, Hun-Jung, Park, Jin-Seong, Jeong, Jae-Kyeong, Jeong, Jong-Han, Shin, Hyun-Soo
• Granted Patent: US 9,240,487 B2
• Time in Patent Office: Days
• US Class Current: 438/29
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 27/1222 with a particular composition, shape or crystalline structure of the active layer
• CPC Class Codes: H01L 27/1251 comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/786 Thin film transistors, i.e. transistors with a channel being at least partly a thin film transistors having only the source or the drain region on an insulator layer H01L29/0653; thin film FinFETs H01L29/785
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs

Abstract

A method of manufacturing a thin film transistor having a compound semiconductor with oxygen as a semiconductor layer and a method of manufacturing an organic light emitting display having the thin film transistor include: forming a gate electrode on an insulating substrate; forming a gate insulating layer on the gate electrode; forming a semiconductor layer including oxygen ions on the gate insulating layer, and including a channel region, a source region, and a drain region; forming a source electrode and a drain electrode to contact the semiconductor layer in the source region and the drain region, respectively; and forming a passivation layer on the semiconductor layer by coating an organic material, wherein a carrier density of the semiconductor layer is maintained in the range of 1E+17 to 1E+18/cm³ to have stable electrical property.

Claims

1. A method of manufacturing a thin film transistor comprising:

forming a gate electrode on an insulating substrate;

forming a gate insulating layer on the gate electrode;

forming a semiconductor layer including oxygen ions on the gate insulating layer, the semiconductor layer including a channel region, a source region, and a drain region;

forming a source electrode and a drain electrode to contact the semiconductor layer in the source region and the drain region, respectively; and

forming a passivation layer on the semiconductor layer by coating a material,

wherein a carrier density of the semiconductor layer is 1E+17 to 1E+18/cm³.

2. The method of manufacturing the thin film transistor as claimed in claim 1, wherein the semiconductor layer is formed of zinc oxide (ZnO).

3. The method of manufacturing the thin film transistor as claimed in claim 1, wherein the semiconductor layer is formed of zinc oxide (ZnO) doped with at least one of gallium (Ga), indium (In), and tin (Sn).

4. The method of manufacturing the thin film transistor as claimed in claim 1, wherein the material is coated through a spin coating method or a slit coating method.

5. The method of manufacturing the thin film transistor as claimed in claim 1, wherein the material is at least one material selected from the group of consisting of polyimide, polyacryl, spin on glass (SOG), photoresist film, and benzocyclobutane (BCB).

6. A method of manufacturing a thin film transistor comprising:

forming a gate electrode on an insulating substrate;

forming a gate insulating layer on the gate electrode;

forming a semiconductor layer including oxygen ions on the gate insulating layer, the semiconductor layer including a channel region, a source region, and a drain region;

forming a passivation layer on the semiconductor layer by coating a material;

forming a photoresist film on the passivation layer and then patterning the photoresist film to expose the source region and drain region of the semiconductor layer; and

forming a source electrode and a drain electrode to contact the semiconductor layer in the source region and the drain region, respectively,

wherein a carrier density of the semiconductor layer is 1E+17 to 1E+18/cm³.

7. The method of manufacturing the thin film transistor as claimed in claim 6, wherein the semiconductor layer is formed of zinc oxide (ZnO).

8. The method of manufacturing the thin film transistor as claimed in claim 6, wherein the semiconductor layer is formed of zinc oxide (ZnO) doped with at least one of gallium (Ga), indium (In), and tin (Sn).

9. The method of manufacturing the thin film transistor as claimed in claim 6, wherein the material is coated through a spin coating method or a slit coating method.

10. The method of manufacturing the thin film transistor as claimed in claim 6, wherein the material is at least one material selected from the group of consisting of polyimide, polyacryl, spin on glass (SOG), photoresist film, and benzocyclobutane (BCB).

11. A method of manufacturing an organic light emitting display comprising:

forming a gate electrode on an insulating substrate;

forming a gate insulating layer on the gate electrode;

forming a semiconductor layer including oxygen ions on the gate insulating layer, the semiconductor layer including a channel region, a source region, and a drain region on the gate insulating layer;

forming a passivation layer on the semiconductor layer by coating a material;

forming a photoresist film on the passivation layer and then patterning the photoresist film to expose the source region and drain region of the semiconductor layer;

forming a source electrode and a drain electrode to contact the semiconductor layer in the source region and the drain region, respectively;

forming a planarization layer on the passivation layer, the source electrode, and the drain electrode, and patterning the planarization layer to expose the source electrode or the drain electrode;

forming a first electrode on the planarization layer to contact the exposed source electrode or the drain electrode;

forming a pixel definition layer on the planarization layer and the first electrode, and exposing the first electrode in a light emitting region thereof; and

forming an organic thin film layer on the exposed first electrode and forming a second electrode on the pixel definition layer and the organic thin film layer,

wherein a carrier density of the semiconductor layer is 1E+17 to 1E+18/cm³.

12. The method of manufacturing the organic light emitting display as claimed in claim 11, wherein the semiconductor layer is formed of zinc oxide (ZnO).

13. The method of manufacturing the organic light emitting display as claimed in claim 11, wherein the semiconductor layer is formed of zinc oxide (ZnO) doped with at least one of gallium (Ga), indium (In), and tin (Sn).

14. The method of manufacturing the organic light emitting display as claimed in claim 11, wherein the material is coated through a spin coating method or a slit coating method.

15. The method of manufacturing the organic light emitting display as claimed in claim 11, wherein the material is at least one material selected from the group of consisting of polyimide, polyacryl, spin on glass (SOG), photoresist film, and benzocyclobutane (BCB).