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Method of manufacturing substrate for forming device, and method of manufacturing nitride-based semiconductor laser diode

  • US 20090155945A1
  • Filed: 03/04/2008
  • Published: 06/18/2009
  • Est. Priority Date: 12/17/2007
  • Status: Active Grant
First Claim
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1. A method of manufacturing a substrate for forming a device, the method comprising the steps of:

  • preparing a GaN substrate of which the a-plane or m-plane is set to a main plane;

    masking the main plane of the GaN substrate; and

    applying the masked GaN substrate to etching liquid, thereby forming a crystallographic surface.

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