METHODS FOR MANUFACTURING CMOS COMPATIBLE BIO-SENSORS

• US 20090155948A1
• Filed: 12/18/2007
• Published: 06/18/2009
• Est. Priority Date: 12/18/2007
• Status: Abandoned Application

• Current Assignee: National Applied Research Laboratories (Government of The Republic of China)
• Original Assignee: National Applied Research Laboratories (Government of The Republic of China)
• Inventors: Lin, Chen-Fu, Chiu, Chin-Fong, Tsai, Hann-Huei, Juang, Ying-Zong
• Application Number:
  US11/959,282
• Publication Number:
  US 20090155948A1
• Time in Patent Office: Days
• US Class Current: 438/49
• CPC Class Codes: B81B 2201/0214 Biosensors; Chemical sensors
• CPC Class Codes: B81C 1/00246 Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
• CPC Class Codes: B81C 2203/0714 Forming the micromechanical structure with a CMOS process
• CPC Class Codes: B81C 2203/0735 Post-CMOS, i.e. forming the micromechanical structure after the CMOS circuit
• CPC Class Codes: G01N 27/128 Microapparatus

Abstract

A manufacture method for CMOS sensor, which comprise of steps such as: forming protection layer on a substrate having multiple device structural layers, then using first photo-resist layer as mask for etching to form patterned molecular sensing layer, then forming third photo resist layer and etching protection layer and substrate so as to remove partial substrate underneath the sensor structure.

Claims

1. A manufacture method for complementary metal oxide semiconductor sensor, comprising of:

providing a substrate which contains multiple device structural layer;

forming a protection layer to cover the substrate and those device structural layers;

forming a first patterned photo-resist layer above the substrate;

performing a first etching process to etch the protection layer until a first etch stop,

forming a patterned molecular sensing layer above the substrate;

forming a third patterned photo-resist layer above the substrate; and

performing a second etching process to etch the protection layer and the substrate until a second etch stop so as to remove the substrate part beneath part of those sensor structural layers.

2. The manufacture method for complementary metal oxide semiconductor sensor of claim 1 wherein the material of the substrate is of single crystal silicon.

3. The manufacture method for complementary metal oxide semiconductor sensor of claim 1 wherein the device structural layer comprising of metallic layer, dielectric layer or poly silicon layer.

4. The manufacture method for CMOS sensor of claim 3 wherein the materials of molecular sensing layer are including of gold, silver and platinum. etc. or its alloys.

5. The manufacture method for complementary metal oxide semiconductor sensor of claim 3 wherein the material of the molecular sensing layer can be polymers form, spin-coating, deposition, sputtering or electro-plating.

6. The manufacture method for CMOS sensor of claim 3 wherein the material of the molecular sensing layer can be ceramic materials from depositing or sputtering.

7. The manufacture method for CMOS sensor of claim 1 wherein the materials of protection layer are, for example, silicon dioxide, silicon nitride etc.

8. The manufacture method for CMOS sensor of claim 1 wherein the first etch stop layer is from at least one of those device structural layers.

9. The manufacture method for CMOS sensor of claim 1 wherein at least one of those device structural layers is the etch mask of first etching process.

10. The manufacture method for CMOS sensor of claim 1 wherein the materials of patterned molecular sensing layer are from, for example, metals such as gold, silver and platinum., etc. or its alloys.

11. The manufacture method for CMOS sensor of claim 1 wherein the materials of patterned molecular sensing layer can be polymers from spin-coating, depositing and electro-plating.

12. The manufacture method for CMOS sensor of claim 1 wherein the materials of patterned molecular sensing layer are ceramic materials from depositing or sputtering processes.

13. The manufacture method for CMOS sensor of claim 1 wherein the methods of forming the patterned molecular sensing layer comprising of:

forming in sequence a second patterned photo resist layer and a molecular sensing layer on the substrate; and

removing the second patterned photo resist layer and part of the molecular sensing layer on the top.

14. The manufacture method for CMOS sensor of claim 13 wherein the method of removing the second patterned photo resist layer is a photo resist lift-off process.

15. The manufacture method for CMOS sensor of claim 1 wherein the method of forming patterned molecular sensing layer comprising of:

forming in sequence a molecular sensing layer and a second patterned photo resist layer on the substrate;

etching the molecular sensing layer;

and removing the second patterned photo resist layer.

16. The manufacture method for CMOS sensor of claim 1 wherein the first etching process is an anisotropic etching process.

17. The manufacture method for CMOS sensor of claim 1 wherein the second etching process, comprising of in sequence an anisotropic etching process, which etches until the protection layer, and an isotropic etching process, which etches until the substrate.