MULTIJUNCTION PHOTOVOLTAIC CELLS

• US 20090159123A1
• Filed: 12/15/2008
• Published: 06/25/2009
• Est. Priority Date: 12/21/2007
• Status: Abandoned Application

• Current Assignee: Snaptrack Incorporated (Qualcomm, Inc.)
• Original Assignee: Qualcomm MEMS Technologies Incorporated (Qualcomm, Inc.)
• Inventors: Kothari, Manish, Tung, Yeh-Jiun
• Application Number:
  US12/335,221
• Publication Number:
  US 20090159123A1
• Time in Patent Office: Days
• US Class Current: 136/256
• CPC Class Codes: H01L 31/02165 using interference filters, e.g. multilayer dielectric filters interference filters G02B5/28
• CPC Class Codes: H01L 31/02167 for solar cells
• CPC Class Codes: H01L 31/056 the light-reflecting means being of the back surface reflector [BSR] type
• CPC Class Codes: H01L 31/0687 Multiple junction or tandem solar cells
• CPC Class Codes: H01L 31/076 Multiple junction or tandem solar cells
• CPC Class Codes: Y02E 10/52 PV systems with concentrators
• CPC Class Codes: Y02E 10/544 Solar cells from Group III-V materials
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells
• CPC Class Codes: Y02E 10/548 Amorphous silicon PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

A plurality of dichroic filters are included in multifunction photovoltaic cells to increase efficiency. For example, in a multi-junction photovoltaic cell comprising blue, green, and red active layers, blue, green, and red dichroic filters that reflect blue, green, and red light, respectively, may be disposed proximal to the blue, green, and red active layers to reflect back light not absorbed on the first past. The dichroic filters may be used to demultiplex white light incident on the PV cell and deliver suitable wavelengths to the appropriate active layer, e.g., blue wavelengths to the blue active layer, green wavelengths to the green active layer, red wavelengths to the red active layer. The PV cell may additionally be interferometrically tuned to increase absorption efficiency. Accordingly, optical resonant layers and cavities may be employed in certain embodiments.

Claims

1. A photovoltaic device comprising:

a first active layer configured to produce an electrical signal as a result of light having a first wavelength absorbed by the first active layer;

a second active layer configured to produce an electrical signal as a result of light having a second wavelength absorbed by the second active layer; and

a first optical filter disposed between the first and second active layers, wherein the first optical filter is configured to reflect more light having the first wavelength than light having the second wavelength and to transmit more light having the second wavelength than light having the first wavelength.

2. The photovoltaic device of claim 1, wherein the first wavelength is shorter than the second.

3. The photovoltaic device of claim 1, wherein at least one of the active layers comprise a semiconductor material.

4. The photovoltaic device of claim 3, wherein the at least one active layer comprises a PN junction or a P-I-N junction.

5. The photovoltaic device of claim 1, wherein at least one of the active layers comprise silicon, germanium, cadmium telluride, copper indium diselenide, copper indium gallium diselenide, light absorbing dyes, light absorbing polymers, polymers having light absorbing nanoparticles disposed therein, or III-V semiconductors.

6. The photovoltaic device of claim 1, further comprising a third active layer configured to produce an electrical signal as a result of light having a third wavelength absorbed by the third active layer.

7. The photovoltaic device of claim 6, wherein the first wavelength is shorter than the second, and the second wavelength is shorter than the third wavelength.

8. The photovoltaic device of claim 7, further comprising a second optical filter disposed between the second and third active layers, wherein the second optical filter is configured to reflect more light having the second wavelength than light having the third wavelength and to transmit more light having the third wavelength than light having the second wavelength.

9. The photovoltaic device of claim 1, wherein the first and second active layers are included in a plurality of active layers comprising at least three active layers.

10. The photovoltaic device of claim 9, wherein the bandgaps of the plurality of active layers have corresponding wavelengths extending over at least about 1000 nanometers between about 450 nm to about 1750 nm.

11. The photovoltaic device of claim 9, wherein the plurality of active layers comprises at least about 5 active layers.

12. The photovoltaic device of claim 11, wherein the plurality of active layers comprises at least about 8 active layers.

13. The photovoltaic device of claim 12, wherein the plurality of active layers comprises at least about 12 active layers.

14. The photovoltaic device of claim 9, wherein the bandgaps of the plurality of active layers increase from one active layer to the next.

15. The photovoltaic device of claim 14, wherein the bandgaps of the plurality of active layers increase by a wavelength increment of less than about 200 nm.

16. The photovoltaic device of claim 15, wherein the bandgaps of the plurality of active layers increase by a wavelength increment of less than about 100 nm.

17. The photovoltaic device of claim 16, wherein the bandgaps of the plurality of active layers increase by a wavelength increment of less than about 50 nm.

18. The photovoltaic device of claim 9, wherein the plurality of active layers comprises at least three alloyed active layer comprising a first material and a second material alloyed together, the first and second materials having different bandgaps.

19. The photovoltaic device of claim 18, wherein the at least three alloyed active layers comprise 6 or more alloyed active layers comprising the first material and the second material alloyed together.

20. The photovoltaic device of claim 19, wherein the at least three alloyed active layers comprise 10 or more alloyed active layers comprising the first material and the second material alloyed together.

21. The photovoltaic device of claim 18, wherein the at least three alloyed active layers comprise different ratios of the first and second materials.

22. The photovoltaic device of claim 21, wherein the at least three alloyed active layers are arranged in order such that the first material decreases in concentration and the second material increases in concentration progressively from one alloyed active layer to the next.

23. The photovoltaic device of claim 18, wherein the first material comprises silicon and the second material comprises germanium.

24. The photovoltaic device of claim 1, wherein the first optical filter comprises an interference filter.

25. The photovoltaic device of claim 24, wherein the first optical filter comprises about 2 to about 100 films.

26. The photovoltaic device of claim 25, wherein the first optical filter comprises a quarter wave stack.

27. The photovoltaic device of claim 1, further comprising an optically transmissive electrode electrically connected to the first active layer.

28. The photovoltaic device of claim 1, further comprising a reflector layer disposed under the first and second active layers to reflect light transmitted through the first and second active layers and first optical filter.

29. The photovoltaic device of claim 1, further comprising a first optical resonance cavity between the first active layer and the first optical filter.

30. The photovoltaic device of claim 29, wherein the presence of the first optical resonance cavity increases the amount of light having the first wavelength that is absorbed by the first active layer.

31. The photovoltaic device of claim 29, wherein the presence of the first optical resonance cavity increases the average field strength of light having the first wavelength in the first active layer.

32. The photovoltaic device of claim 29, having an overall absorption efficiency for wavelengths in the solar spectrum, wherein the absorption efficiency integrated over the wavelengths in the solar spectrum increases with the presence of the first optical resonance cavity.

33. The photovoltaic device of claim 29, wherein the presence of the first optical resonant cavity produces an increase in absorbed optical power integrated over the solar spectrum that is greater for the first active layer than the increase in absorbed optical power integrated over the solar spectrum for any other layers in the photovoltaic device.

34. The photovoltaic device of claim 29, wherein the first optical resonance cavity comprises a dielectric.

35. The photovoltaic device of claim 29, wherein the first optical resonance cavity comprises a non-conducting oxide.

36. The photovoltaic device of claim 29, wherein the first optical resonance cavity comprises an air gap.

37. The photovoltaic device of claim 29, wherein the thickness of the first optical resonance cavity is optimized to increase light absorption in the first active layer.

38. The photovoltaic device of claim 37, wherein the thicknesses of at least one of the first and second active layers is optimized to increase light absorption in the first or second active layers.

39. The photovoltaic device of claim 37, wherein the thicknesses of the first optical resonance cavity and first and second active layers are optimized to increase light absorption in the first and second active layers.

40. The photovoltaic device of claim 1, wherein the thickness of the first optical filter is optimized to increase light absorption in the first active layer.

41. The photovoltaic device of claim 1, wherein the thickness of the first optical filter is optimized to increase light absorption in the first active layer.

42. The photovoltaic device of claim 8, further comprising a second optical resonance cavity between the second active layer and the second optical filter.

43. The photovoltaic device of claim 42, wherein the presence of the second optical resonance cavity increases the amount of light having the second wavelength that is absorbed by the second active layer more than the amount of light of the first wavelength that is absorbed by the second active layer.

44. The photovoltaic device of claim 1, further comprising an antireflective layer disposed over the first active layer.

45. The photovoltaic device of claim 1, further comprising at least one via electrically connected to at least one of the active layers.

46. A photovoltaic device comprising:

a first means for producing an electrical signal as a result of light having a first wavelength absorbed by the first electrical signal producing means;

a second means for produce an electrical signal as a result of light having a second wavelength absorbed by the second electrical signal producing means; and

a first means for filtering light disposed between the first and second electrical signal producing means, wherein the first light filtering means is configured to reflect more light having the first wavelength than light having the second wavelength and to transmit more light having the second wavelength than light having the first wavelength.

47. The photovoltaic device of claim 46, further comprising at least one via electrically connected to at least one of the active layers.

48. The photovoltaic device of claim 46, wherein the first electrical signal producing means comprises a first active layer.

49. The photovoltaic device of claim 46, wherein the second electrical signal producing means comprises a second active layer.

50. The photovoltaic device of claim 46, wherein the first light filtering means comprises a first optical filter.

51. A method of manufacturing a photovoltaic device comprising:

providing a first active layer configured to produce an electrical signal as a result of light having a first wavelength absorbed by the first active layer;

providing a second active layer configured to produce an electrical signal as a result of light having a second wavelength absorbed by the second active layer; and

disposing a first optical filter between the first and second active layers, wherein the first optical filter is configured to reflect more light having the first wavelength than light having the second wavelength and to transmit more light having the second wavelength than light having the first wavelength.