PRINTED TFT AND TFT ARRAY WITH SELF-ALIGNED GATE
First Claim
1. A method of configuring a self-aligning thin film transistor comprising:
- forming a gate contact area with a state-switchable material that is initially non-conductive;
forming a gate dielectric which isolates the gate contact area;
forming a source-drain layer, including a source contact and a drain contact with a source-drain layer material;
exposing a portion of the gate contact area to a form of energy, wherein the energy transforms a portion of the state-switchable material which corresponds to the exposed portion of the gate contact area, turning the exposed portion of the state-switchable material from non-conductive to conductive and the exposed portion of the gate contact area to a gate contact; and
forming a semi-conductor layer of a semiconductor material between the source contact and the drain contact.
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Accused Products
Abstract
A method is used to form a self-aligning thin film transistor. The thin film transistor includes a gate contact formed with a state-switchable material, and a dielectric layer to isolate the gate contact. A source-drain layer, which includes a source contact, and a drain contact are formed with a source-drain material. An area of the gate contact is exposed to a form of energy, wherein the energy transforms a portion of the state switchable material from a non-conductive material to a conductive material, the conductive portion defining the gate contact. A semiconductor material is formed between the source contact and the drain contact.
25 Citations
21 Claims
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1. A method of configuring a self-aligning thin film transistor comprising:
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forming a gate contact area with a state-switchable material that is initially non-conductive; forming a gate dielectric which isolates the gate contact area; forming a source-drain layer, including a source contact and a drain contact with a source-drain layer material; exposing a portion of the gate contact area to a form of energy, wherein the energy transforms a portion of the state-switchable material which corresponds to the exposed portion of the gate contact area, turning the exposed portion of the state-switchable material from non-conductive to conductive and the exposed portion of the gate contact area to a gate contact; and forming a semi-conductor layer of a semiconductor material between the source contact and the drain contact. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A thin film transistor comprising
a gate contact formed from a state-switchable material; -
a gate dielectric layer formed over the gate contact; a source-drain layer including a source contact, and a drain contact formed with a source-drain layer material, wherein any portion of the state-switchable material covered by the source contact and the drain contact is non-conductive and any portion of the state-switchable material not located under the source contact and the drain contact is conductive; and a semiconductor material formed between the source contact and the drain contact. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21)
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Specification