WAFER LEVEL PACKAGE STRUCTURE AND PRODUCTION METHOD THEREFOR
First Claim
1. A wafer level package structure comprising:
- a semiconductor wafer having a plurality of sensor units; and
a package wafer bonded to a surface of said semiconductor wafer;
wherein said semiconductor wafer has a first metal layer formed on each of said sensor units;
said package wafer has a bonding metal layer on a position facing said first metal layer; and
the bonding between said semiconductor wafer and said package wafer comprises a solid-phase direct bonding without diffusion between an activated surface of said first metal layer and an activated surface of said bonding metal layer.
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Accused Products
Abstract
A wafer level package structure, in which a plurality of compact sensor devices with small variations in sensor characteristics are formed, and a method of producing the same are provided. This package structure has a semiconductor wafer having plural sensor units, and a package wafer bonded to the semiconductor wafer. The semiconductor wafer has a first metal layer formed with respect to each of the sensor units. The package wafer has a bonding metal layer at a position facing the first metal layer. Since a bonding portion between the semiconductor wafer and the package wafer is formed at room temperature by a direct bonding between activated surfaces of the first metal layer and the bonding metal layer, it is possible to prevent that variations in sensor characteristics occur due to residual stress at the bonding portion.
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Citations
21 Claims
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1. A wafer level package structure comprising:
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a semiconductor wafer having a plurality of sensor units; and a package wafer bonded to a surface of said semiconductor wafer; wherein said semiconductor wafer has a first metal layer formed on each of said sensor units; said package wafer has a bonding metal layer on a position facing said first metal layer; and the bonding between said semiconductor wafer and said package wafer comprises a solid-phase direct bonding without diffusion between an activated surface of said first metal layer and an activated surface of said bonding metal layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method of producing a wafer level package structure comprising the steps of:
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providing a semiconductor wafer having a plurality of sensor units, and a package wafer; forming a first metal layer on each of said sensor units; forming a bonding metal layer on said package wafer at a position facing said first metal layer; performing a surface activation treatment in a reduced pressure atmosphere to form activated surfaces of said first metal layer and said bonding metal layer; and after the surface activation treatment, forming a direct bonding between the activated surfaces of said first metal layer and said bonding metal layer at room temperature. - View Dependent Claims (18, 19, 20, 21)
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Specification