PHASE CHANGE MEMORY DEVICES AND SYSTEMS, AND RELATED PROGRAMMING METHODS
First Claim
1. A method of performing a program operation in a resistance-variable memory device comprising a plurality of resistance-variable memory cells, the method comprising:
- supplying at least one pulse current to a selected resistance-variable memory cell;
sensing data stored in the selected resistance-variable memory cell by detecting an amount of a verify current flowing through the selected resistance-variable memory cell;
determining whether the sensed data is identical to data to be programmed in the selected resistance-variable memory cell; and
if the sensed data is judged not to be identical to the data to be programmed, supplying a pulse current to the selected resistance-variable memory cell, a resistance value of the selected resistance-variable memory cell being changed by heat corresponding to the pulse current and the pulse current being stepwise increased when the supplying is repeated.
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Abstract
A phase change memory device performs a program operation by receiving program data to be programmed in selected memory cells, sensing read data already stored in the selected memory cells by detecting respective magnitudes of verify currents flowing through the selected memory cells when a verify read voltage is applied to the selected memory cells, determining whether the read data is identical to the program data, and upon determining that the program data for one or more of the selected memory cells is not identical to the corresponding read data, programming the one or more selected memory cells with the program data.
123 Citations
6 Claims
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1. A method of performing a program operation in a resistance-variable memory device comprising a plurality of resistance-variable memory cells, the method comprising:
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supplying at least one pulse current to a selected resistance-variable memory cell; sensing data stored in the selected resistance-variable memory cell by detecting an amount of a verify current flowing through the selected resistance-variable memory cell; determining whether the sensed data is identical to data to be programmed in the selected resistance-variable memory cell; and if the sensed data is judged not to be identical to the data to be programmed, supplying a pulse current to the selected resistance-variable memory cell, a resistance value of the selected resistance-variable memory cell being changed by heat corresponding to the pulse current and the pulse current being stepwise increased when the supplying is repeated. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification