METHOD FOR MANUFACTURING METAL CHIPS BY PLASMA FROM A LAYER COMPRISING SEVERAL ELEMENTS

• US 20090162657A1
• Filed: 10/20/2008
• Published: 06/25/2009
• Est. Priority Date: 12/24/2007
• Status: Active Grant

• Current Assignee: Commissariat a L'Energie Atomique (AES Corporation)
• Original Assignee: Commissariat a L'Energie Atomique (AES Corporation)
• Inventors: Garcia, Jonathan, Marion, Francois, Grenouillet, Laurent, Olivier, Nicolas, Perrin, Marion
• Granted Patent: US 7,691,735 B2
• Time in Patent Office: Days
• US Class Current: 428/402
• CPC Class Codes: H01L 2224/05022 the internal layer being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/05099 Material
• CPC Class Codes: H01L 2224/05572 the external layer extending out of an opening
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/11001 Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
• CPC Class Codes: H01L 2224/114 by blanket deposition of the material of the bump connector
• CPC Class Codes: H01L 2224/1152 Self-assembly, e.g. self-agglomeration of the bump material in a fluid
• CPC Class Codes: H01L 2224/1161 Physical or chemical etching
• CPC Class Codes: H01L 2224/11622 Photolithography
• CPC Class Codes: H01L 2224/11849 Reflowing
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/131 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/13101 the principal constituent melting at a temperature of less than 400°C
• CPC Class Codes: H01L 2224/13105 Gallium [Ga] as principal constituent
• CPC Class Codes: H01L 2224/13109 Indium [In] as principal constituent
• CPC Class Codes: H01L 2224/13599 Material
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/29099 Material
• CPC Class Codes: H01L 2224/29599 Material
• CPC Class Codes: H01L 24/11 Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00013 : Fully indexed content
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01048 : Cadmium [Cd]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/01052 : Tellurium [Te]
• CPC Class Codes: H01L 2924/01057 : Lanthanum [La]
• CPC Class Codes: H01L 2924/01058 : Cerium [Ce]
• CPC Class Codes: H01L 2924/01065 : Terbium [Tb]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/07811 : Extrinsic, i.e. with electrical conductive fillers
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H05K 3/323 : by applying an anisotropic conductive adhesive layer over an array of pads
• CPC Class Codes: H05K 3/3478 : Applying solder preforms; Transferring prefabricated solder patterns
• CPC Class Codes: Y10T 428/2982 : Particulate matter [e.g., sphere, flake, etc.]

Abstract

The invention relates to a method for manufacturing chips composed of at least one electrically conductive material. Such a method comprises the following steps:

• • deposition, on a support, of an alloy comprising at least the electrically conductive material and a second material;
  • exposure of the alloy to plasma etching, in order to cause the desorption of the materials of the alloy not forming part of the composition of the chips, that is at least the second material but not the electrically conductive material;
  • formation of chips composed of at least said electrically conductive material.

Claims

1. A method for manufacturing chips composed of at least one electrically conductive material, the method comprising:

depositing, on a support, an alloy comprising at least the electrically conductive material and a second material;

exposing the alloy to plasma etching, in order to cause the desorption of the materials of the alloy not forming part of the composition of the chips, that is at least the second material but not the electrically conductive material; and

forming chips composed of at least said electrically conductive material.

2. The chip manufacturing method as claimed in claim 1, wherein the first electrically conductive material and the second material are selected from the elements in columns II and VI or in columns III and V of the Periodic Table respectively.

3. The chip manufacturing method as claimed in claim 2, wherein the first electrically conductive material is indium (In), gallium (Ga) or cadmium (Cd), and the second material is phosphorus (P), arsenic (As), or tellurium (Te).

4. The chip manufacturing method as claimed in claim 1, wherein the alloy is ternary or quaternary, comprising one or more electrically conductive materials.

5. The chip manufacturing method as claimed in claim 1, wherein the alloy is deposited on the support by chemical vapor deposition (CVD).

6. The chip manufacturing method as claimed in claim 1, wherein the alloy deposited on the support is shaped by lithography and etching, before exposure to the plasma etching.

7. The chip manufacturing method as claimed in claim 1, wherein the plasma etching step is carried out under a vacuum of about 2 to 50 mTorr, advantageously of about 10 mTorr.

8. The chip manufacturing method as claimed in claim 1, wherein the gases forming the plasma in the plasma etching step are ethylene (C₂H₄) and hydrogen (H₂).

9. Metal chips obtained using the method according to claim 1, having a diameter lower than 10 micrometers, advantageously lower than 3 micrometers.