METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE USING A LAYER SUSPENDED ACROSS A TRENCH
First Claim
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1. A method of manufacturing a semiconductor device, comprising:
- forming first patterns separated from each other by a first width and second patterns separated from each other by a second width wider than the first width, on a substrate;
etching the substrate using the first patterns and the second patterns as an etching mask to form a first trench having a first depth and a preliminary second trench having a second depth;
forming a sacrificial layer to cover the first patterns and fill up a space between the first patterns; and
etching the substrate using the sacrificial layer as an etching mask to form a second trench having a third depth deeper than the second depth.
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Abstract
In methods of forming a trench, first patterns separated from each other by a first width and second patterns separated from each other by a second width are formed on a substrate. The second width is wider than the first width. The substrate is etched using the first patterns and the second patterns to form a first trench having a first depth and a preliminary second trench having a second depth. A sacrificial layer is formed to fill up a space between the first patterns. The substrate is etched using the sacrificial layer to form a second trench having a third depth deeper than the second depth.
36 Citations
20 Claims
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1. A method of manufacturing a semiconductor device, comprising:
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forming first patterns separated from each other by a first width and second patterns separated from each other by a second width wider than the first width, on a substrate; etching the substrate using the first patterns and the second patterns as an etching mask to form a first trench having a first depth and a preliminary second trench having a second depth; forming a sacrificial layer to cover the first patterns and fill up a space between the first patterns; and etching the substrate using the sacrificial layer as an etching mask to form a second trench having a third depth deeper than the second depth. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of manufacturing a semiconductor device comprising:
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forming a first opening and a second opening that is wider than the first opening, in a first layer on a substrate; etching the substrate through the first and second openings in the first layer to form respective first and second trenches in the substrate; forming a second layer that is suspended across the first trench but is not suspended across the second trench; further etching the second trench across which the second layer is not suspended while preventing at least some further etching of the first trench by the second layer that is suspended across the first trench; and removing the second layer. - View Dependent Claims (17, 18, 19, 20)
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Specification