METHODS OF DEPOSITING A RUTHENIUM FILM

• US 20090163024A1
• Filed: 12/17/2008
• Published: 06/25/2009
• Est. Priority Date: 12/21/2007
• Status: Abandoned Application

• Current Assignee: Asm Genitech Korea Ltd. (ASM International NV)
• Original Assignee: Asm Genitech Korea Ltd. (ASM International NV)
• Inventors: Kim, Jeon Ho, Park, Hyung Sang, Jung, Dong Rak, Choi, Seung Woo, Lee, Chun Soo
• Application Number:
  US12/337,141
• Publication Number:
  US 20090163024A1
• Time in Patent Office: Days
• US Class Current: 438/653
• CPC Class Codes: C23C 16/16 from metal carbonyl compounds
• CPC Class Codes: C23C 16/18 from metallo-organic compounds
• CPC Class Codes: H01L 21/28556 by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76846 Layer combinations

Abstract

A method of depositing includes: loading a substrate into a reactor; and conducting a plurality of atomic layer deposition cycles on the substrate in the reactor. At least one of the cycles includes steps of: supplying a ruthenium precursor to the reactor; supplying a purge gas to the reactor; and supplying non-plasma ammonia gas to the reactor after supplying the ruthenium precursor. The method allows formation of a ruthenium layer having an excellent step-coverage at a relatively low deposition temperature at a relatively high deposition rate. In situ isothermal deposition of barrier materials, such as TaN at 200-300° C., is also facilitated.

Claims

1. A method of making an integrated circuit, the method comprising:

loading a substrate into a reactor; and

conducting a plurality of deposition cycles, at least one of the cycles comprising steps of;

supplying a ruthenium precursor to the reactor;

supplying a purge gas to the reactor after supplying the ruthenium precursor; and

supplying non-plasma ammonia gas to the reactor after supplying the purge gas.

2. The method of claim 1, wherein all of the cycles comprising steps of:

supplying a ruthenium precursor to the reactor;

supplying a purge gas to the reactor after supplying the ruthenium precursor; and

supplying non-plasma ammonia gas to the reactor after supplying the purge gas.

3. The method of claim 1, wherein the temperature of the reactor is maintained at about 200°

C. to about 300°

C. during the at least one of the cycles.

4. The method of claim 3, wherein the temperature of the reactor is maintained at about 250°

C. to about 300°

C. during the at least one of the cycles.

5. The method of claim 1, wherein supplying the non-plasma ammonia gas comprises supplying the non-plasma ammonia for a duration of about 3 seconds to about 6 seconds.

6. The method of claim 1, wherein the ruthenium precursor is selected from the group consisting of Ru(EtCp)₂, C₆H₈Ru(CO)₃, Ru(OD)₃, RuCp₂, Ru(thd)₃, and RuO₄.

7. The method of claim 1, wherein the at least one of the cycles further comprises supplying a purge gas after the supplying the ammonia gas.

8. The method of claim 1, further comprising depositing a material over the substrate at a temperature between about 200°

C. and about 300°

C. prior to conducting the plurality of deposition cycles, wherein depositing the material comprises depositing the material on the substrate in the reactor after loading the substrate into the reactor.

9. The method of claim 8, wherein the plurality of deposition cycles and the deposition of the material are performed in the same chamber of the reactor.

10. The method of claim 8, wherein the reactor comprises multiple chambers, and wherein the plurality of deposition cycles and the deposition of the material are performed in different chambers in the reactor.

11. The method of claim 8, wherein the material comprises a diffusion barrier material.

12. The method of claim 11, wherein the diffusion barrier material comprises a metal nitride.

13. The method of claim 12, wherein the metal nitride is selected from the group consisting of tantalum nitride, titanium nitride, tungsten nitride, tungsten carbide nitride, tantalum carbide nitride, and combinations thereof.

14. The method of claim 11, wherein conducting the plurality of deposition cycles comprises depositing a ruthenium layer directly on the diffusion barrier.

15. The method of claim 14, further comprising depositing a conductive material directly on the ruthenium layer.

16. The method of claim 15, wherein the conductive material comprises copper.

17. The method of claim 1, wherein the substrate includes a surface that includes a trench or a step, and wherein a layer deposited by conducting a plurality of deposition cycles conforms to the trench or the step.

18. A method of making an electronic device, the method comprising:

loading a substrate into a reactor;

depositing a material over the substrate in the reactor at a temperature between about 200°

C. and about 300°

C., the material comprising a diffusion barrier material; and

conducting a plurality of atomic layer deposition (ALD) cycles on the substrate in the reactor, at least one of the cycles comprising steps of;

supplying a ruthenium precursor to the reactor;

supplying a purge gas to the reactor; and

supplying non-plasma ammonia gas to the reactor after supplying the ruthenium precursor.

19. The method of claim 18, wherein the material comprises a metal nitride.

20. The method of claim 19, wherein the metal nitride is selected from the group consisting of tantalum nitride, titanium nitride, tungsten nitride, tungsten carbide nitride, tantalum carbide nitride, and combinations thereof.

21. The method of claim 18, wherein the temperature of the reactor is maintained at about 200°

C. to about 300°

C. during the at least one of the cycles.

22. The method of claim 18, wherein supplying the non-plasma ammonia gas comprises supplying the non-plasma ammonia for a duration of about 3 seconds to about 6 seconds.

23. The method of claim 18, wherein the ruthenium precursor is selected from the group consisting of Ru(EtCp)₂, C₆H₈Ru(CO)₃, Ru(OD)₃, RuCp₂, Ru(thd)₃, and RuO₄.

24. The method of claim 18, further comprising depositing a copper layer over the substrate immediately after conducting the plurality of ALD cycles.