HEAT TREATMENT METHOD, HEAT TREATMENT APPARATUS AND SUBSTRATE PROCESSING APPARATUS
First Claim
Patent Images
1. A heat treatment method comprising:
- preparing a substrate having a coating film; and
heating the substrate under an atmosphere of a reducing organic compound.
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Abstract
Disclosed is a heat treatment unit 4 serving as a heat treatment apparatus, which includes a chamber 42 for containing a wafer W on which a low dielectric constant interlayer insulating film is formed, a formic acid supply device 44 for supplying gaseous formic acid into the chamber 42, and a heater 43 for heating the wafer W in the chamber 42 which is supplied with formic acid by the formic acid supply device 44.
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Citations
27 Claims
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1. A heat treatment method comprising:
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preparing a substrate having a coating film; and heating the substrate under an atmosphere of a reducing organic compound. - View Dependent Claims (2)
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3. A heat treatment method comprising:
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preparing a substrate having an interlayer insulating film of a low dielectric constant (low-k film); and heating the substrate under an atmosphere of a reducing organic compound. - View Dependent Claims (4)
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5. A heat treatment method comprising:
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loading a substrate having a coating film into a processing chamber; supplying a gaseous reducing organic compound into the processing chamber; and heating the substrate in the processing chamber supplied with the gaseous organic compound. - View Dependent Claims (6, 7, 8, 9)
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10. A heat treatment method comprising:
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loading a substrate having an interlayer insulating film of a low dielectric constant (low-k film) into a processing chamber; supplying a gaseous reducing organic compound into the processing chamber; and heating the substrate in the processing chamber supplied with the gaseous organic compound. - View Dependent Claims (11, 12, 13, 14)
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15. A heat treatment apparatus comprising:
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a processing chamber for accommodating a substrate having a coating film; an organic compound supply device for supplying a gaseous reducing organic compound into the processing chamber; and a heater for heating the substrate in the processing chamber supplied with the gaseous organic compound. - View Dependent Claims (16, 17, 18, 19)
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20. A heat treatment apparatus comprising:
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a processing chamber for accommodating a substrate having an interlayer insulating film of a low dielectric constant (low-k film); an organic compound supply device for supplying a gaseous reducing organic compound into the processing chamber; and a heater for heating the substrate in the processing chamber supplied with the gaseous organic compound. - View Dependent Claims (21, 22, 23, 24)
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25. A substrate processing apparatus comprising:
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a coating process unit for forming a coating film on a substrate; and a heat treatment unit for performing a heat treatment on the substrate, wherein the heat treatment unit includes; a processing chamber for accommodating the substrate; an organic compound supply device for supplying a gaseous reducing organic compound into the processing chamber; and a heater for heating the substrate in the processing chamber supplied with the gaseous organic compound.
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26. A computer-readable storage medium which is operated on a computer and stores a program for controlling a heat treatment apparatus, wherein the program controls the heat treatment apparatus to perform a heat treatment method including:
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loading a substrate having a coating film into a processing chamber; supplying a gaseous reducing organic compound into the processing chamber; and heating the substrate in the processing chamber supplied with the gaseous organic compound.
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27. A computer-readable storage medium which is operated on a computer and stores a program for controlling a heat treatment apparatus, wherein the program controls the heat treatment apparatus to perform a heat treatment method including:
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loading a substrate having an interlayer insulating film of a low dielectric constant (low-k film) into a processing chamber; supplying a gaseous reducing organic compound into the processing chamber; and heating the substrate in the processing chamber supplied with the gaseous organic compound.
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Specification