HEAT TREATMENT METHOD, HEAT TREATMENT APPARATUS AND SUBSTRATE PROCESSING APPARATUS

• US 20090163038A1
• Filed: 05/28/2007
• Published: 06/25/2009
• Est. Priority Date: 05/31/2006
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Miyoshi, Hidenori
• Granted Patent: US 8,114,786 B2
• Time in Patent Office: Days
• US Class Current: 438/781
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02282 liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
• CPC Class Codes: H01L 21/02337 treatment by exposure to a gas or vapour
• CPC Class Codes: H01L 21/3122 layers comprising polysiloxane compounds
• CPC Class Codes: H01L 21/3124 layers comprising hydrogen silsesquioxane
• CPC Class Codes: H01L 21/31629 Deposition of halogen doped silicon oxide, e.g. fluorine doped silicon oxide
• CPC Class Codes: H01L 21/31633 Deposition of carbon doped silicon oxide, e.g. SiOC
• CPC Class Codes: H01L 21/31695 Deposition of porous oxides or porous glassy oxides or oxide based porous glass
• CPC Class Codes: H01L 21/76814 post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
• CPC Class Codes: H01L 21/76826 by contacting the layer with gases, liquids or plasmas
• CPC Class Codes: H01L 21/76828 thermal treatment

Abstract

Disclosed is a heat treatment unit 4 serving as a heat treatment apparatus, which includes a chamber 42 for containing a wafer W on which a low dielectric constant interlayer insulating film is formed, a formic acid supply device 44 for supplying gaseous formic acid into the chamber 42, and a heater 43 for heating the wafer W in the chamber 42 which is supplied with formic acid by the formic acid supply device 44.

Claims

1. A heat treatment method comprising:

preparing a substrate having a coating film; and

heating the substrate under an atmosphere of a reducing organic compound.

2. The heat treatment method of claim 1, wherein the organic compound includes at least one of alcohol, aldehyde and carboxylic acid.

3. A heat treatment method comprising:

preparing a substrate having an interlayer insulating film of a low dielectric constant (low-k film); and

heating the substrate under an atmosphere of a reducing organic compound.

4. The heat treatment method of claim 3, wherein the organic compound includes at least one of alcohol, aldehyde and carboxylic acid.

5. A heat treatment method comprising:

loading a substrate having a coating film into a processing chamber;

supplying a gaseous reducing organic compound into the processing chamber; and

heating the substrate in the processing chamber supplied with the gaseous organic compound.

6. The heat treatment method of claim 5, wherein the gaseous organic compound is produced by bubbling a liquid or solid organic compound by a nonreactive gas.

7. The heat treatment method of claim 6, wherein a diluent gas for diluting the organic compound is supplied into the processing chamber when the organic compound is supplied.

8. The heat treatment method of claim 5, wherein the substrate is heated in the processing chamber while an inner pressure of the processing chamber is reduced to a predetermined pressure.

9. The heat treatment method of claim 5, wherein the organic compound includes at least one of alcohol, aldehyde and carboxylic acid.

10. A heat treatment method comprising:

loading a substrate having an interlayer insulating film of a low dielectric constant (low-k film) into a processing chamber;

supplying a gaseous reducing organic compound into the processing chamber; and

heating the substrate in the processing chamber supplied with the gaseous organic compound.

11. The heat treatment method of claim 10, wherein the gaseous organic compound is produced by bubbling a liquid or solid organic compound by a nonreactive gas.

12. The heat treatment method of claim 11, wherein a diluent gas for diluting the organic compound is supplied into the processing chamber when the organic compound is supplied.

13. The heat treatment method of claim 10, wherein the substrate is heated in the processing chamber while an inner pressure of the processing chamber is reduced to a predetermined pressure.

14. The heat treatment method of claim 10, wherein the organic compound includes at least one of alcohol, aldehyde and carboxylic acid.

15. A heat treatment apparatus comprising:

a processing chamber for accommodating a substrate having a coating film;

an organic compound supply device for supplying a gaseous reducing organic compound into the processing chamber; and

a heater for heating the substrate in the processing chamber supplied with the gaseous organic compound.

16. The heat treatment apparatus of claim 15, wherein the organic compound supply device produces the gaseous organic compound by bubbling a liquid or solid organic compound by a nonreactive gas and supplies the gaseous organic compound into the processing chamber.

17. The heat treatment apparatus of claim 15, further comprising a diluent gas supply device which supplies a diluent gas for diluting the organic compound into the processing chamber.

18. The heat treatment apparatus of claim 15, further comprising a depressurizing device for reducing an inner pressure of the processing chamber to a predetermined pressure at least when the substrate is heated by the heater.

19. The heat treatment apparatus of claim 15, wherein the organic compound supply device supplies the organic compound including at least one of alcohol, aldehyde and carboxylic acid.

20. A heat treatment apparatus comprising:

a processing chamber for accommodating a substrate having an interlayer insulating film of a low dielectric constant (low-k film);

an organic compound supply device for supplying a gaseous reducing organic compound into the processing chamber; and

a heater for heating the substrate in the processing chamber supplied with the gaseous organic compound.

21. The heat treatment apparatus of claim 20, wherein the organic compound supply device produces the gaseous organic compound by bubbling a liquid or solid organic compound by a nonreactive gas and supplies the gaseous organic compound into the processing chamber.

22. The heat treatment apparatus of claim 20, further comprising a diluent gas supply device which supplies a diluent gas for diluting the organic compound into the processing chamber.

23. The heat treatment apparatus of claim 20, further comprising a depressurizing device for reducing an inner pressure of the processing chamber to a predetermined pressure at least when the substrate is heated by the heater.

24. The heat treatment apparatus of claim 20, wherein the organic compound supply device supplies the organic compound including at least one of alcohol, aldehyde and carboxylic acid.

25. A substrate processing apparatus comprising:

a coating process unit for forming a coating film on a substrate; and

a heat treatment unit for performing a heat treatment on the substrate,

wherein the heat treatment unit includes;

a processing chamber for accommodating the substrate;

an organic compound supply device for supplying a gaseous reducing organic compound into the processing chamber; and

a heater for heating the substrate in the processing chamber supplied with the gaseous organic compound.

26. A computer-readable storage medium which is operated on a computer and stores a program for controlling a heat treatment apparatus, wherein the program controls the heat treatment apparatus to perform a heat treatment method including:

loading a substrate having a coating film into a processing chamber;

supplying a gaseous reducing organic compound into the processing chamber; and

heating the substrate in the processing chamber supplied with the gaseous organic compound.

27. A computer-readable storage medium which is operated on a computer and stores a program for controlling a heat treatment apparatus, wherein the program controls the heat treatment apparatus to perform a heat treatment method including:

loading a substrate having an interlayer insulating film of a low dielectric constant (low-k film) into a processing chamber;

supplying a gaseous reducing organic compound into the processing chamber; and

heating the substrate in the processing chamber supplied with the gaseous organic compound.