VAPOR DEPOSITION REACTOR

• US 20090165715A1
• Filed: 12/27/2007
• Published: 07/02/2009
• Est. Priority Date: 12/27/2007
• Status: Active Grant

• Current Assignee: Veeco Ald Inc. (Veeco Instruments Incorporated)
• Original Assignee: Synos Technology, Inc. (Veeco Instruments Incorporated)
• Inventors: OH, Jae-eung
• Granted Patent: US 8,333,839 B2
• Time in Patent Office: Days
• US Class Current: 118/723.R
• CPC Class Codes: C23C 16/45551 for relative movement of the substrate and the gas injectors or half-reaction reactor compartments

Abstract

A vapor deposition reactor has a configuration where a substrate or a vapor deposition reactor moves in a non-contact state with each other to allow the substrate to pass by the reactor and an injection unit and an exhaust unit are installed as a basic module of the reactor for receiving a precursor or a reactant and for receiving and pumping a purge gas, respectively. With the use of a small-size inlet for the reactor, homogeneous film properties are obtained, the deposition efficiency of precursors is improved, and an amount of time required for a purge/pumping process can be reduced. In addition, since the reactor itself is configured to reflect each step of ALD, it does not need a valve. Moreover, the reactor makes it easier for users to apply remote plasma, use super high frequencies including microwave, and UV irradiation.

Claims

1. A vapor deposition reactor being configured to make a substrate pass by the reactor through a relative motion between the substrate and the reactor in a non-contact state, comprising:

an injection unit for receiving a precursor or a reactant; and

an exhaust unit for receiving and pumping a purge gas,

wherein the injection unit and the exhaust unit function as a basic module of the reactor and the configuration of the reactor is designed using the basic module, and

wherein deposition conditions are varied according to a pressure in the injection unit.

2. The vapor deposition reactor of claim 1, wherein the relative motion of the substrate and the reactor is a linear motion.

3. The vapor deposition reactor of claim 1, wherein the relative motion of the substrate and the reactor is a rotational motion.

4. The vapor deposition reactor of claim 1, wherein the injection unit and the exhaust unit respectively is formed of a channel in a linear pipe shape having multiple perforated holes as inlets.

5. The vapor deposition reactor of claim 1, wherein a portion of the exhaust unit for discharging a purge gas is curved.

6. The vapor deposition reactor of claim 1, wherein a relative speed of the substrate and the reactor becomes a vapor deposition parameter.

7. The vapor deposition reactor of claim 1, wherein a spacing between the substrate and the reactor becomes a vapor deposition parameter.

8. The vapor deposition reactor of claim 1, wherein a width of the injection unit or a width of the exhaust unit becomes a vapor deposition parameter.

9. The vapor deposition reactor of claim 1, wherein the injection unit comprises a plurality of inlets.

10. The vapor deposition reactor of claim 9, wherein the plurality of inlets are arranged in parallel or alternately in a line.

11. The vapor deposition reactor of claim 1, comprising two basic modules and is used for ALD by performing a 4-step cycle consisting of adsorption, purge/pumping, reaction or substitution, and purge/pumping.

12. The vapor deposition reactor of claim 1, comprising three basic modules, wherein two of the basic modules are configured to receive and exhaust a reactant for ALD.

13. The vapor deposition reactor of claim 1, comprising three basic modules, wherein two of the basic modules are configured to receive and exhaust a precursor for ALD.

14. The vapor deposition reactor of claim 1, comprising a plurality of reactor units, each reactor unit comprising two basic modules so that a plurality of atomic layers are deposited each time the substrate passes by the reactor for ALD.

15. The vapor deposition reactor according to any one of claims 11 through 14, further comprising a cooling or heating means provided inside the injection unit.

16. The vapor deposition reactor according to any one of claims 11 through 14, further comprising a UV irradiation means provided inside the injection unit.

17. The vapor deposition reactor according to any one of claims 11 through 14, further comprising a plasma application means provided inside the injection unit.

18. The vapor deposition reactor according to any one of claims 11 through 14, further comprising a super high frequency application means provided inside the injection unit.