Susceptor with Support Bosses

• US 20090165721A1
• Filed: 12/27/2007
• Published: 07/02/2009
• Est. Priority Date: 12/27/2007
• Status: Abandoned Application

• Current Assignee: SunEdison, Inc.
• Original Assignee: MEMC Electronic Materials, Inc. (SunEdison, Inc.)
• Inventors: Pitney, John A., Hamano, Manabu, Hellwig, Lance G.
• Application Number:
  US11/965,459
• Publication Number:
  US 20090165721A1
• Time in Patent Office: Days
• US Class Current: 118/728
• CPC Class Codes: C23C 16/4583 the substrate being supported substantially horizontally
• CPC Class Codes: C30B 25/12 Substrate holders or susceptors
• CPC Class Codes: C30B 29/06 Silicon
• CPC Class Codes: H01L 21/68735 characterised by edge profile or support profile
• CPC Class Codes: H01L 21/6875 characterised by a plurality of individual support members, e.g. support posts or protrusions

Abstract

A susceptor for supporting a semiconductor wafer during a chemical vapor deposition process includes a body having opposing upper and lower surfaces. Support bosses extend downward from the lower face of the body. Each support boss has a boss opening sized and shaped for receiving a support post of a chemical vapor deposition device to mount the susceptor on the support post.

Claims

1. A susceptor for supporting a semiconductor wafer during a chemical vapor deposition process in a chemical vapor deposition device that includes a plurality of support posts, the susceptor comprising:

a body having opposing upper and lower surfaces,

at least one recess extending downward from the upper surface of the body for receiving a single semiconductor wafer therein during the chemical vapor deposition process,

a plurality of support bosses extending downward from the lower face of the body, each of said support bosses having a boss opening, wherein the boss opening is sized and shaped for receiving a free end of one of the support posts of the chemical vapor deposition device to mount the susceptor on the support posts.

2. A susceptor as set forth in claim 1 wherein each boss opening is generally oblong.

3. A susceptor as set forth in claim 2 wherein each boss opening has major and minor diameters.

4. A susceptor as set forth in claim 3 wherein the major diameter of the boss openings are along a radius of the susceptor.

5. A susceptor as set forth in claim 3 wherein the major diameter of each boss opening is about 0.3 in and the minor diameter of each boss opening is about 0.2 in.

6. A susceptor as set forth in claim 2 wherein each support boss includes a wall having an interior surface defining the boss opening, and an exterior surface.

7. A susceptor as set forth in claim 6 wherein the wall has a thickness extending between interior and exterior surfaces of the wall, and wherein the thickness of each wall is generally uniform.

8. A susceptor as set forth in claim 7 wherein the thickness of the wall of each support boss is about 0.06 in.

9. An apparatus for conducting a chemical vapor deposition process, the apparatus comprising:

a reaction chamber,

a plurality of support posts disposed in the chamber,

a susceptor for supporting a semiconductor wafer during the chemical vapor deposition process, the susceptor disposed in the reaction chamber, the susceptor comprising;

a body having opposing upper and lower surfaces,

a plurality of support bosses extending downward from the lower face of the body, each of said support bosses having a boss opening, wherein at least a free end of the support post is received within the boss opening to mount the susceptor on the support posts.

10. An apparatus as set forth in claim 9 wherein each boss opening is generally oblong.

11. An apparatus as set forth in claim 10 wherein each boss opening has major and minor diameters.

12. An apparatus as set forth in claim 11 wherein the major diameter of the boss openings are coextensive with a radius of the susceptor.

13. An apparatus as set forth in claim 11 wherein the major diameter of each boss opening is about 0.3 in and the minor diameter of each boss opening is about 0.2 in.

14. An apparatus as set forth in claim 10 wherein each support boss includes a wall having an interior surface defining the boss opening, and an exterior surface that is generally concentric with the interior surface.

15. An apparatus as set forth in claim 13 wherein the wall has a thickness extending between interior and exterior surfaces of the wall, and wherein the thickness of each wall is generally uniform.

16. An apparatus as set forth in claim 15 wherein the thickness of the wall of each support boss is about 0.06 in.

17. An apparatus as set forth in claim 9 further comprising at least one recess extending downward from the upper surface of the body for receiving a single semiconductor wafer therein.