PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF

• US 20090165854A1
• Filed: 12/23/2008
• Published: 07/02/2009
• Est. Priority Date: 12/28/2007
• Status: Abandoned Application

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Seo, Satoshi, Ikeda, Hisao, Yamazaki, Shunpei
• Application Number:
  US12/343,011
• Publication Number:
  US 20090165854A1
• Time in Patent Office: Days
• US Class Current: 136/258
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• CPC Class Codes: H01L 31/028 including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/03921 including only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/0687 Multiple junction or tandem solar cells
• CPC Class Codes: H01L 31/1804 comprising only elements of Group IV of the Periodic Table
• CPC Class Codes: H10K 30/00 Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation integrated devices or assemblies of multiple devices H10K39/00, H10K65/00; electrolytic light-sensitive devices H01G9/20
• CPC Class Codes: Y02E 10/544 Solar cells from Group III-V materials
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells
• CPC Class Codes: Y02E 10/549 Organic PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

A photoelectric conversion device includes a first unit cell in which one face of a single crystal semiconductor layer is provided with a first electrode and a first impurity semiconductor layer including one conductivity type and an opposite face is provided with a second impurity semiconductor layer including a conductivity type opposite to the one conductivity type, and a second unit cell including a p-type organic semiconductor and an n-type organic semiconductor. The first unit cell and the second unit cell are connected in series with an intermediate layer interposed therebetween. The intermediate layer includes a transition metal oxide. A face of the first electrode which is opposite to the single crystal semiconductor layer is provided with an insulating layer, and the insulating layer is bonded to a supporting substrate.

Claims

1. A photoelectric conversion device comprising:

a first unit cell comprising;

a single crystal semiconductor layer;

a first electrode and a first impurity semiconductor layer including one conductivity type, which are provided to a first face side of the single crystal semiconductor layer; and

a second impurity semiconductor layer including a conductivity type opposite to the one conductivity type provided to a second face opposite to the first face;

a second unit cell including a p-type organic semiconductor and an n-type organic semiconductor;

an intermediate layer interposed between the first unit cell and the second unit cell;

an insulating layer on a third face side of the first electrode which is opposite side to the single crystal semiconductor layer; and

a supporting substrate is bonded to the insulating layer,

wherein the first unit cell and the second unit cell are connected in series, and wherein the intermediate layer includes a transition metal oxide.

2. The photoelectric conversion device according to claim 1, wherein the transition metal oxide is an oxide of a metal belonging to any of Group 4 to Group 8 in a periodic table of elements.

3. The photoelectric conversion device according to claim 1, wherein the transition metal oxide is any of vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide.

4. The photoelectric conversion device according to claim 1, wherein the intermediate layer includes an organic compound.

5. The photoelectric conversion device according to claim 4, wherein the organic compound is any of an aromatic amine compound, a carbazole derivative, an aromatic hydrocarbon, and a high molecular compound.

6. The photoelectric conversion device according to claim 1, wherein the single crystal semiconductor layer has a thickness of equal to or more than 0.1 μ

m and equal to or less than 10 μ

m.

7. The photoelectric conversion device according to claim 1, wherein the single crystal semiconductor layer is single crystal silicon.

8. The photoelectric conversion device according to claim 1, wherein the first electrode comprises a metal selected from a group consisting of titanium, molybdenum, tungsten, tantalum, chromium, and nickel.

9. The photoelectric conversion device according to claim 8, wherein the first electrode includes a nitride layer of the metal material, and the nitride layer is in contact with the first impurity semiconductor layer.

10. The photoelectric conversion device according to claim 1, wherein the insulating layer is any of a silicon oxide layer, a silicon oxynitride layer, a silicon nitride oxide layer, and a silicon nitride layer.

11. The photoelectric conversion device according to claim 1, wherein the supporting substrate is a glass substrate.

12. A method of manufacturing a photoelectric conversion device, comprising the steps of:

introducing a cluster ion to a single crystal semiconductor substrate through a first face thereof at a depth of 10 μ

m or less from the first face to form a damaged layer;

forming a first impurity semiconductor layer on the first face side;

forming a first electrode on the first face side;

forming an insulating layer on the first face side;

bonding a supporting substrate to the insulating layer;

cleaving the single crystal semiconductor substrate along the damaged layer to make a single crystal semiconductor layer remain over the supporting substrate;

forming a second impurity semiconductor layer on a cleavage plane side of the single crystal semiconductor layer;

forming an intermediate layer over the second impurity semiconductor layer;

forming a second unit cell including a p-type organic semiconductor and an n-type organic semiconductor over the intermediate layer; and

forming a second electrode over the second unit cell.

14. The method of manufacturing a photoelectric conversion device according to claim 12, wherein the cluster ion is H₃⁺.

16. The method of manufacturing a photoelectric conversion device according to claim 12, wherein the intermediate layer includes a transition metal oxide.

18. The method of manufacturing a photoelectric conversion device according to claim 16, wherein the transition metal oxide is an oxide of a metal belonging to any of Group 4 to Group 8 in a periodic table of elements.

20. The method of manufacturing a photoelectric conversion device according to claim 16, wherein the transition metal oxide is any of vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide.

22. The method of manufacturing a photoelectric conversion device according to claim 12, wherein the intermediate layer includes an organic compound.

24. The method of manufacturing a photoelectric conversion device according to claim 22, wherein the organic compound is any of an aromatic amine compound, a carbazole derivative, an aromatic hydrocarbon, and a high molecular compound.

13. A method of manufacturing a photoelectric conversion device, comprising the steps of:

introducing an ion beam to a single crystal semiconductor substrate through a first face thereof, to form a damaged layer at a predetermined depth from the first face;

forming at least a first impurity semiconductor layer including one conductivity type, a first electrode in contact with the first impurity semiconductor layer, and an insulating layer over the first electrode, on the surface side of the single crystal semiconductor substrate to which the cluster ion is introduced;

disposing the single crystal semiconductor substrate so that a face of a supporting substrate is in contact with the insulating layer;

forming a crack in the damaged layer by a thermal treatment, and separating and removing the single crystal semiconductor substrate while a single crystal semiconductor layer remains over the supporting substrate;

forming a second impurity semiconductor layer including a conductivity type opposite to the one conductivity type on a surface side of the single crystal semiconductor layer exposed by separation;

forming an intermediate layer over the second impurity semiconductor layer;

forming a second unit cell including a p-type organic semiconductor and an n-type organic semiconductor over the intermediate layer; and

forming a second electrode over the second unit cell,

wherein the ion beam comprises a cluster ion, which has heavier mass than a hydrogen molecule, at 50% or more with respect to the total ions of the ion beam.

15. The method of manufacturing a photoelectric conversion device according to claim 13, wherein the cluster ion is H₃⁺.

17. The method of manufacturing a photoelectric conversion device according to claim 13, wherein the intermediate layer includes a transition metal oxide.

19. The method of manufacturing a photoelectric conversion device according to claim 17, wherein the transition metal oxide is an oxide of a metal belonging to any of Group 4 to Group 8 in a periodic table of elements.

21. The method of manufacturing a photoelectric conversion device according to claim 17, wherein the transition metal oxide is any of vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide.

23. The method of manufacturing a photoelectric conversion device according to claim 13, wherein the intermediate layer includes an organic compound.

25. The method of manufacturing a photoelectric conversion device according to claim 23, wherein the organic compound is any of an aromatic amine compound, a carbazole derivative, an aromatic hydrocarbon, and a high molecular compound.