OXIDE SEMICONDUCTOR DEVICE AND SURFACE TREATMENT METHOD OF OXIDE SEMICONDUCTOR

• US 20090166616A1
• Filed: 12/08/2008
• Published: 07/02/2009
• Est. Priority Date: 12/26/2007
• Status: Abandoned Application

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: UCHIYAMA, Hiroyuki
• Application Number:
  US12/329,649
• Publication Number:
  US 20090166616A1
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

Oxygen defects formed at the boundary between the zinc oxide type oxide semiconductor and the gate insulator are terminated by a surface treatment using sulfur or selenium as an oxygen group element or a compound thereof, the oxygen group element scarcely occurring physical property value change. Sulfur or selenium atoms effectively substitute oxygen defects to prevent occurrence of electron supplemental sites by merely applying a gas phase or liquid phase treatment to an oxide semiconductor or gate insulator with no remarkable change on the manufacturing process. As a result, this can attain the suppression of the threshold potential shift and the leak current in the characteristics of a thin film transistor.

Claims

1. An oxide semiconductor device comprising:

a substrate;

a channel layer disposed above the substrate and made up of a zinc-containing semiconductor;

a source-drain electrode layer disposed in contact with both end portions of the channel layer so as to sandwich the channel layer;

a gate insulator disposed in contact with one surface of the channel layer; and

a gate electrode disposed on the gate insulator, the gate electrode giving an electric field to the channel layer by way of the gate insulator;

wherein a surface treatment layer containing at least one of sulfur and selenium is provided at a boundary where the gate insulator and the channel layer are in contact with each other.

2. The oxide semiconductor device according to claim 1, wherein the atom concentration of sulfur or selenium contained in the surface treatment layer is within a range of 10¹⁶ cm⁻

3 or more and 10²⁰ cm<sup>−

3</sup> or less.

3. The oxide semiconductor device according to claim 1, wherein the channel layer comprises an oxide semiconductor at least containing zinc, or a lamination layer comprising several kinds of the zinc oxide type oxide semiconductors in combination.

4. The oxide semiconductor device according to claim 1, comprising a bottom gate type structure in which the gate electrode layer is disposed on the surface of the substrate and the source-drain electrode layer is disposed on the remote side from the gate electrode relative to the substrate.

5. The oxide semiconductor device according to claim 1, comprising a top gate type structure in which the source-drain electrode layer is disposed on the surface of the substrate and the gate electrode layer is disposed to the substrate on the remote side from the gate electrode relative to the substrate.

6. A method of manufacturing an oxide semiconductor device, comprising the steps of:

providing a substrate;

forming a gate electrode having a desired shape above the substrate;

depositing a gate insulator so as to cover the surface of the gate electrode and the substrate;

depositing a source-drain electrode layer comprising a conductor over the gate insulator;

pattering the deposited source-drain electrode layer thereby forming an opening above the gate electrode;

introducing at least one of sulfur or selenium through the opening to the surface of the gate insulator thereby forming a surface treatment layer; and

depositing a zinc-containing oxide semiconductor so as to at least cover the surface of the surface treatment layer thereby forming a channel layer.

7. The method of manufacturing an oxide semiconductor device according to claim 6, wherein

the method of introducing at least one of sulfur and selenium to the surface of the gate insulator is any one of molecular beam irradiation, plasmas irradiation, ion beam irradiation, radical irradiation, gas phase treatment, mist treatment and liquid phase treatment, with the compound described above, and

the method of forming the channel layer comprising the zinc-containing oxide semiconductor is any one of a sputtering method, a CVD (Chemical Vapor Deposition) method, an MBE (Molecular Beam Epitaxy) method, and a reactive vapor deposition method.

8. The method of manufacturing an oxide semiconductor device according to claim 6, wherein the compound of sulfur or selenium used for forming the surface treatment layer is any one of hydrogen sulfide, ammonium sulfide, ethanethiol, decanethiol, dodecanethiol, ethylmethyl sulfide, di-propyl sulfide, propylene sulfide, selenium sulfide, selenic acid, and selenous acid.

9. A method of manufacturing an oxide semiconductor device, comprising the steps of:

providing a substrate;

forming a source-drain electrode layer having a desired shape above the substrate;

depositing a zinc-containing oxide semiconductor so as to cover the surface of the source-drain electrode layer and the substrate;

introducing at least one of sulfur and selenium to the surface of the oxide semiconductor thereby forming a surface treatment layer;

depositing a gate insulator above the oxide semiconductor having the surface treatment layer; and

depositing a gate electrode film on the gate insulator and pattering the gate electrode film thereby forming a gate electrode.

10. The method of manufacturing an oxide semiconductor device according to claim 9, wherein

the method of introducing at least one of sulfur and selenium to the surface of the gate insulator is any one of molecular beam irradiation, plasma irradiation, ion beam irradiation, radical irradiation, gas phase treatment, mist treatment, and liquid phase treatment, with the compound described above, and

the method of forming the channel layer comprising the zinc-containing oxide semiconductor is any one of a sputtering method, a CVD (Chemical Vapor Deposition) method, an MBE (Molecular Beam Epitaxy) method, and a reactive vapor deposition method.

11. The method of manufacturing an oxide semiconductor according to claim 9, wherein the compound of sulfur or selenium used for forming the surface treatment layer is any one of hydrogen sulfide, ammonium sulfide, ethanethiol, decanethiol, dodecanethiol, ethylmethyl sulfide, di-propyl sulfide, propylene sulfide, selenium sulfide, selenic acid, and selenous acid.