Thin film transistor, method of fabricating a thin film transistor and flat panel display device having the same
First Claim
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1. A thin film transistor (TFT), comprising:
- a substrate;
a transparent semiconductor layer on the substrate, the transparent semiconductor layer including zinc oxide and exhibiting a charge concentration of about 1×
1014 atom/cm3 to about 1×
1017 atom/cm3;
a gate electrode on the substrate;
a gate insulating layer between the gate electrode and the transparent semiconductor layer, the gate insulting layer insulating the gate electrode from the transparent semiconductor layer; and
source and drain electrodes on the substrate, the source and drain electrodes being in contact with the transparent semiconductor layer.
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Abstract
A thin film transistor (TFT) includes a substrate, a transparent semiconductor layer on the substrate, the transparent semiconductor layer including zinc oxide and exhibiting a charge concentration of about 1×1014 atom/cm3 to about 1×1017 atom/cm3, a gate electrode on the substrate, a gate insulating layer between the gate electrode and the transparent semiconductor layer, the gate insulting layer insulating the gate electrode from the transparent semiconductor layer, and source and drain electrodes on the substrate, the source and drain electrodes being in contact with the transparent semiconductor layer.
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Citations
16 Claims
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1. A thin film transistor (TFT), comprising:
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a substrate; a transparent semiconductor layer on the substrate, the transparent semiconductor layer including zinc oxide and exhibiting a charge concentration of about 1×
1014 atom/cm3 to about 1×
1017 atom/cm3;a gate electrode on the substrate; a gate insulating layer between the gate electrode and the transparent semiconductor layer, the gate insulting layer insulating the gate electrode from the transparent semiconductor layer; and source and drain electrodes on the substrate, the source and drain electrodes being in contact with the transparent semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of fabricating a thin film transistor (TFT), comprising:
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forming a transparent semiconductor layer on a substrate, the transparent semiconductor layer including zinc oxide and exhibiting a charge concentration of about 1×
1014 atom/cm3 to about 1×
1017 atom/cm3;forming a gate electrode on the substrate; forming a gate insulating layer between the gate electrode and the transparent semiconductor layer, the gate insulting layer insulating the gate electrode from the transparent semiconductor layer; and forming source and drain electrodes on the substrate, the source and drain electrodes being in contact with the transparent semiconductor layer. - View Dependent Claims (10, 11, 12, 13)
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14. A flat panel display (FPD) device, comprising:
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a thin film transistor (TFT), including; a substrate, a transparent semiconductor layer on the substrate, the transparent semiconductor layer including zinc oxide and exhibiting a charge concentration of about 1×
1014 atom/cm3 to about 1×
1017 atom/cm3,a gate electrode on the substrate, a gate insulating layer between the gate electrode and the transparent semiconductor layer, the gate insulting layer insulating the gate electrode from the transparent semiconductor layer, and source and drain electrodes on the substrate, the source and drain electrodes being in contact with the transparent semiconductor layer; and a pixel part including at least one pixel and being in electrical communication with the TFT via at least one of the source and drain electrodes of the TFT. - View Dependent Claims (15, 16)
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Specification