Nitride Semiconductor Light Emitting Device and Fabrication Method Thereof
First Claim
1. A nitride semiconductor light emitting device comprising:
- a substrate having a predetermined pattern formed on a surface thereof by an etch;
a protruded portion disposed above a non-etched region of the substrate, the protruded portion comprising a first buffer layer and a first nitride semiconductor layer stacked;
a second buffer layer formed above the etched region of the substrate;
a second nitride semiconductor layer formed above the second buffer layer and the protruded portion;
a third nitride semiconductor layer formed above the second nitride semiconductor layer;
an active layer formed above the third nitride semiconductor layer to emit light; and
a fourth nitride semiconductor layer formed above the active layer.
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Abstract
The present invention relates to a nitride semiconductor light emitting device including: a substrate having a predetermined pattern formed on a surface thereof by an etch; a protruded portion disposed on a non-etched region of the substrate, and having a first buffer layer and a first nitride semiconductor layer stacked thereon; a second buffer layer formed on the etched region of the substrate; a second nitride semiconductor layer formed on the second buffer layer and the protruded portion; a third nitride semiconductor layer formed on the second nitride semiconductor layer; an active layer formed on the third nitride semiconductor layer to emit light; and a fourth nitride semiconductor layer formed on the active layer. According to the present invention, the optical extraction efficiency of the nitride semiconductor light emitting device can be enhanced.
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Citations
46 Claims
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1. A nitride semiconductor light emitting device comprising:
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a substrate having a predetermined pattern formed on a surface thereof by an etch; a protruded portion disposed above a non-etched region of the substrate, the protruded portion comprising a first buffer layer and a first nitride semiconductor layer stacked; a second buffer layer formed above the etched region of the substrate; a second nitride semiconductor layer formed above the second buffer layer and the protruded portion; a third nitride semiconductor layer formed above the second nitride semiconductor layer; an active layer formed above the third nitride semiconductor layer to emit light; and a fourth nitride semiconductor layer formed above the active layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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26. A nitride semiconductor light emitting device comprising:
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a substrate having a predetermined pattern formed on a surface thereof by an etch; a protruded portion disposed above a non-etched region of the substrate, the protruded portion comprising a first buffer layer and a first nitride semiconductor layer stacked; a second buffer layer formed above the etched region of the substrate; a second nitride semiconductor layer formed above the second buffer layer and the protruded portion; an active layer formed above the second nitride semiconductor layer to emit light; and a third nitride semiconductor layer formed above the active layer.
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27. A method for fabricating a nitride semiconductor light emitting device, the method comprising:
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forming a protruded portion comprising a first buffer layer and a first nitride semiconductor layer above a substrate and forming a predetermined pattern in the substrate by etching a surface of the substrate where the protruded portion is not formed; forming a second buffer layer above the etched region of the substrate; forming a second nitride semiconductor layer above the second buffer layer; forming a third nitride semiconductor layer above the second nitride semiconductor layer; forming an active layer for emitting light above the third nitride semiconductor layer; and forming a fourth nitride semiconductor layer above the active layer. - View Dependent Claims (28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46)
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Specification