High Efficiency Group III Nitride LED with Lenticular Surface
First Claim
1. In a light emitting diode having a vertical orientation with an ohmic contact on portions of a top surface of said diode and a mirror layer adjacent the light emitting region of said diode;
- the improvement comprising;
an opening in said mirror layer beneath the said top ohmic contact through the diode that defines a non-contact area between said mirror layer and said light emitting region of said diode to encourage current flow to take place other than at said non-contact area to in turn decrease the number of light emitting recombinations beneath said ohmic contact and increase the number of light emitting recombinations in the more transparent portions of said diode.
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Accused Products
Abstract
A light emitting diode is disclosed having a vertical orientation with an ohmic contact on portions of a top surface of the diode and a mirror layer adjacent the light emitting region of the diode. The diode includes an opening in the mirror layer beneath the geometric projection of the top ohmic contact through the diode that defines a non-contact area between the mirror layer and the light emitting region of the diode to encourage current flow to take place other than at the non-contact area to in turn decrease the number of light emitting recombinations beneath the ohmic contact and increase the number of light emitting recombinations in the more transparent portions of the diode.
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Citations
15 Claims
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1. In a light emitting diode having a vertical orientation with an ohmic contact on portions of a top surface of said diode and a mirror layer adjacent the light emitting region of said diode;
- the improvement comprising;
an opening in said mirror layer beneath the said top ohmic contact through the diode that defines a non-contact area between said mirror layer and said light emitting region of said diode to encourage current flow to take place other than at said non-contact area to in turn decrease the number of light emitting recombinations beneath said ohmic contact and increase the number of light emitting recombinations in the more transparent portions of said diode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
- the improvement comprising;
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9. In a light emitting diode having a vertical orientation with an ohmic contact on portions of a top surface of said diode and a mirror layer adjacent the light emitting region of said diode;
- the improvement comprising;
a passivated portion of said light emitting region beneath said top ohmic contact the diode that defines a less conductive area between said mirror layer and said light emitting region of said diode to encourage current flow to take place other than at said passivated portion to in turn decrease the number of light emitting recombinations beneath said ohmic contact and increase the number of light emitting recombinations in the more transparent portions of said diode. - View Dependent Claims (10, 11, 12, 13, 14, 15)
- the improvement comprising;
Specification