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Semiconductor device

  • US 20090166666A1
  • Filed: 12/16/2008
  • Published: 07/02/2009
  • Est. Priority Date: 12/26/2007
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a semiconductor stacked layer; and

    a conductive structure in contact with the semiconductor stacked layer, the conductive structure having a bottom width and a top width opposite to the bottom width;

    wherein a ratio of the top width to the bottom width is less than 0.7.

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