Semiconductor device

• US 20090166666A1
• Filed: 12/16/2008
• Published: 07/02/2009
• Est. Priority Date: 12/26/2007
• Status: Active Grant

• Current Assignee: Epistar Corporation (Ennostar, Inc.)
• Original Assignee: Epistar Corporation (Ennostar, Inc.)
• Inventors: Hsieh, Min-Hsun, Yao, Chiu-Lin, Chen, Tzer-Perng
• Granted Patent: US 8,022,425 B2
• Time in Patent Office: Days
• US Class Current: 257/101
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/42 Transparent materials

Abstract

An exemplary semiconductor device is provided. The semiconductor device includes a semiconductor stacked layer and a conductive structure. The conductive structure is located on the semiconductor stacked layer. The conductive structure includes a bottom portion and a top portion on opposite sides thereof. The bottom portion is in contact with the semiconductor stacked layer. A ratio of a top width of the top portion to a bottom width of the bottom portion is less than 0.7. The conductive structure can be a conductive dot structure or a conductive line structure.

Claims

1. A semiconductor device comprising:

a semiconductor stacked layer; and

a conductive structure in contact with the semiconductor stacked layer, the conductive structure having a bottom width and a top width opposite to the bottom width;

wherein a ratio of the top width to the bottom width is less than 0.7.

2. The semiconductor device according to claim 1, wherein the ratio of the top width to the bottom width is less than 0.35.

3. The semiconductor device according to claim 1, wherein a cross section of the conductive structure is triangular.

4. The semiconductor device according to claim 1, wherein the bottom width is less than 5 μ

m.

5. The semiconductor device according to claim 1, wherein the bottom width is less than a wavelength of light generated by the semiconductor device.

6. The semiconductor device according to claim 1, wherein a height from the bottom to the top is greater than the bottom width.

7. The semiconductor device according to claim 1, further comprising a roughened structure or a periodic concave-convex structure formed on a surface of the semiconductor stacked layer.

8. The semiconductor device according to claim 1, further comprising a protective layer formed on sidewalls of the conductive structure.

9. The semiconductor device according to claim 1, further comprising a transparent conductive layer formed on the conductive structure.

10. The semiconductor device according to claim 9, further comprising another transparent conductive layer located between the conductive structure and the semiconductor stacked layer.

11. The semiconductor device according to claim 1, further comprising a plurality of grooves in the semiconductor stacked layer, and an insulating protective layer filling in the grooves.

12. The semiconductor device according to claim 1, wherein the conductive structure is a conductive dot structure or a conductive line structure.

13. The semiconductor device according to claim 1, wherein the semiconductor stacked layer comprises an upper surface, and an average roughness of the upper surface is greater than 0.1 μ

m.

14. The semiconductor device according to claim 1, wherein the conductive structure is a conductive line structure, and the semiconductor device further comprises an electrode formed on the conductive structure.

15. The semiconductor device according to claim 14, wherein the electrode comprises a fingerlike pattern.

16. A semiconductor device comprising:

a semiconductor stacked layer; and

a conductive structure located on the semiconductor stacked layer, the conductive structure including a bottom portion and a top portion on opposite sides thereof, the bottom portion in contact with the semiconductor stacked layer;

wherein a height from the bottom portion to the top portion is greater than a bottom width of the bottom portion.

17. The semiconductor device according to claim 16, wherein a ratio of the height to the bottom portion is greater than 1.5.

18. The semiconductor device according to claim 16, wherein the bottom width is less than a wavelength of light generated by the semiconductor device.

19. The semiconductor device according to claim 16, further comprising a protective layer formed on sidewalls of the conductive structure.

20. A semiconductor device comprising:

a semiconductor stacked layer having a first semiconductor layer, an active layer and a second semiconductor layer; and

a conductive structure formed in one of the first semiconductor layer and the second semiconductor layer.

21. The semiconductor device according to claim 20, wherein the conductive structure a conductive dot structure or a conductive line structure.

22. The semiconductor device according to claim 20, wherein a width of the conductive structure is less than 5 μ

m.

23. The semiconductor device according to claim 22, wherein the width is in the range from 0.1 μ

m to 3 μ

m.

24. The semiconductor device according to claim 20, further comprising a transparent conductive layer formed on the semiconductor stacked layer.