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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

  • US 20090166677A1
  • Filed: 12/08/2008
  • Published: 07/02/2009
  • Est. Priority Date: 12/28/2007
  • Status: Abandoned Application
First Claim
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1. A semiconductor device, comprising:

  • a semiconductor substrate;

    a diode having a cathode formed on a first surface side of the semiconductor substrate and an anode formed on a second surface side of the semiconductor substrate; and

    a transistor formed over the semiconductor substrate, whereinthe transistor includes a semiconductor layer laminate including a first nitride semiconductor layer and a second nitride semiconductor layer that are formed sequentially from the semiconductor substrate side, the second nitride semiconductor layer has a wider bandgap than that of the first nitride semiconductor layer, the transistor further includes a source electrode and a drain electrode that are formed spaced apart from each other over the semiconductor layer laminate, and a gate electrode formed between the source electrode and the drain electrode, the source electrode is electrically connected to the anode, and the drain electrode is electrically connected to the cathode.

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