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SEMICONDUCTOR DEVICE, METHOD FOR OPERATING A SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE

  • US 20090166720A1
  • Filed: 12/26/2007
  • Published: 07/02/2009
  • Est. Priority Date: 12/26/2007
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a semiconductor substrate;

    at least a pn-junction arranged in the semiconductor substrate;

    at least a field electrode arranged at least next to a portion of the pn-junction, the field electrode being insulated from the semiconductor substrate; and

    a switching device being electrically connected to the field electrode and adapted to apply selectively and dynamically one of a first electrical potential and a second electrical potential, which is different to the first electrical potential, to the field electrode to alter the avalanche breakdown characteristics of the pn-junction.

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