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Semiconductor Device and Manufacturing Method Thereof

  • US 20090166733A1
  • Filed: 12/22/2008
  • Published: 07/02/2009
  • Est. Priority Date: 12/28/2007
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor device, the method comprising the steps of:

  • forming a first conductive-type buried layer in a semiconductor substrate and forming a first conductive-type drift area on the first conductive-type buried layer;

    forming a gate insulating layer and gate electrodes by selectively removing the first conductive-type drift area;

    forming a first oxide layer on the semiconductor substrate including the gate electrodes;

    implanting second conductive-type impurity ions into the semiconductor substrate including the first oxide layer;

    forming a nitride layer on the first oxide layer;

    forming a second conductive-type well by diffusing the second conductive-type impurity ions and simultaneously forming a second oxide layer on the nitride layer;

    removing the nitride layer and the second oxide layer from the first oxide layer;

    forming a thin oxide layer by partially removing the first oxide layer;

    forming first conductive-type source areas at sides of each gate electrode;

    forming a dielectric layer on the thin oxide layer;

    forming a trench by selectively etching the dielectric layer and the thin oxide layer;

    forming a source contact in the trench; and

    forming a drain electrode layer electrically connected with the first conductive-type buried layer.

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