Semiconductor Device and Manufacturing Method Thereof
First Claim
1. A method of manufacturing a semiconductor device, the method comprising the steps of:
- forming a first conductive-type buried layer in a semiconductor substrate and forming a first conductive-type drift area on the first conductive-type buried layer;
forming a gate insulating layer and gate electrodes by selectively removing the first conductive-type drift area;
forming a first oxide layer on the semiconductor substrate including the gate electrodes;
implanting second conductive-type impurity ions into the semiconductor substrate including the first oxide layer;
forming a nitride layer on the first oxide layer;
forming a second conductive-type well by diffusing the second conductive-type impurity ions and simultaneously forming a second oxide layer on the nitride layer;
removing the nitride layer and the second oxide layer from the first oxide layer;
forming a thin oxide layer by partially removing the first oxide layer;
forming first conductive-type source areas at sides of each gate electrode;
forming a dielectric layer on the thin oxide layer;
forming a trench by selectively etching the dielectric layer and the thin oxide layer;
forming a source contact in the trench; and
forming a drain electrode layer electrically connected with the first conductive-type buried layer.
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Accused Products
Abstract
A method of manufacturing a semiconductor device including forming a first conductive-type buried layer in a substrate; forming a first conductive-type drift area on the first conductive-type buried layer; forming a gate insulating layer and gate electrodes by selectively removing the first conductive-type drift area; forming a first oxide layer on the substrate and gate electrodes; implanting second conductive-type impurity ions into the substrate; forming a nitride layer on the first oxide layer; forming a second conductive-type well by diffusing the second conductive-type impurity ions while forming a second oxide layer; removing the nitride layer, the second oxide layer, and portions of the first oxide layer; forming first conductive-type source areas at sides of the gate electrode(s); forming a dielectric layer on the oxide layer; forming a trench in the dielectric layer and the oxide layer; forming a source contact in the trench; and forming a drain.
22 Citations
20 Claims
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1. A method of manufacturing a semiconductor device, the method comprising the steps of:
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forming a first conductive-type buried layer in a semiconductor substrate and forming a first conductive-type drift area on the first conductive-type buried layer; forming a gate insulating layer and gate electrodes by selectively removing the first conductive-type drift area; forming a first oxide layer on the semiconductor substrate including the gate electrodes; implanting second conductive-type impurity ions into the semiconductor substrate including the first oxide layer; forming a nitride layer on the first oxide layer; forming a second conductive-type well by diffusing the second conductive-type impurity ions and simultaneously forming a second oxide layer on the nitride layer; removing the nitride layer and the second oxide layer from the first oxide layer; forming a thin oxide layer by partially removing the first oxide layer; forming first conductive-type source areas at sides of each gate electrode; forming a dielectric layer on the thin oxide layer; forming a trench by selectively etching the dielectric layer and the thin oxide layer; forming a source contact in the trench; and forming a drain electrode layer electrically connected with the first conductive-type buried layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A semiconductor device comprising:
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a semiconductor substrate including a drain electrode layer, a first conductive-type buried layer on the drain electrode layer, a first conductive-type drift area on the first conductive-type buried layer, and a second conductive-type well on the first conductive-type drift area; a gate insulating layer and a gate electrode in a first trench in regions of the first conductive-type drift area and the second conductive-type well; source areas at sides of the gate electrode; an oxide layer and a dielectric layer on the semiconductor substrate including the source areas and the gate electrode; a second trench in regions of the dielectric layer, the oxide layer and the second conductive-type well; a barrier layer on the second trench and the dielectric layer; and a source contact in the barrier layer. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification