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TRENCH GATE MOSFET AND METHOD FOR FABRICATING THE SAME

  • US 20090166734A1
  • Filed: 12/28/2008
  • Published: 07/02/2009
  • Est. Priority Date: 12/28/2007
  • Status: Active Grant
First Claim
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1. A device comprising:

  • a first conductive type semiconductor substrate;

    a second conductive type first epitaxial layer formed over the first conductive type semiconductor substrate;

    a second conductive type second epitaxial layer formed over the second conductive type first epitaxial layer;

    a first conductive type body region formed over the second conductive type second epitaxial layer;

    a plurality of trenches formed spaced apart in the first conductive type body region;

    a gate buried in each one of the trenches;

    a plurality of second conductive type emitter regions formed in the first conductive type body region; and

    a contact hole formed in the first conductive type body region between adjacent second conductive type emitter regions,wherein a bottom portion of the first conductive type body region formed under the contact hole and contacting the second conductive type second epitaxial layer has a circular cross-section.

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