UTILIZING APERTURE WITH PHASE SHIFT FEATURE IN FORMING MICROVIAS

• US 20090170239A1
• Filed: 12/31/2007
• Published: 07/02/2009
• Est. Priority Date: 12/31/2007
• Status: Active Grant

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Li, Yonggang
• Granted Patent: US 8,318,536 B2
• Time in Patent Office: Days
• US Class Current: 438/106
• CPC Class Codes: B23K 2101/35 Surface treated articles
• CPC Class Codes: B23K 2101/40 Semiconductor devices
• CPC Class Codes: B23K 2103/08 Non-ferrous metals or alloys
• CPC Class Codes: B23K 2103/172 wherein at least one of the layers is non-metallic
• CPC Class Codes: B23K 2103/50 Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
• CPC Class Codes: B23K 2103/52 Ceramics
• CPC Class Codes: B23K 26/066 by using masks
• CPC Class Codes: B23K 26/382 by boring
• CPC Class Codes: B23K 26/40 taking account of the properties of the material involved
• CPC Class Codes: H01L 21/486 Via connections through the substrate with or without pins

Abstract

A method, comprises drilling a set of one or more microvias in a semiconductor package with an aperture, wherein drilling the set of microvias comprises to use an aperture that has a phase shift region to reduce a spot size of a drilling beam that is used to form the set of microvias.

Claims

1. A method, comprising:

drilling a set of one or more microvias in a semiconductor package with an aperture;

wherein drilling the set of microvias comprises to use an aperture to have a phase shift region to reduce a spot size of a drilling beam that is used to form the set of microvias.

2. The method of claim 1, wherein the phase shift region is partially transmissive to the drilling beam and reverses the drilling beam in phase.

3. The method of claim 2, wherein the aperture comprises a region that is opaque to the drilling beam and an opening that is surrounded by the phase shift region.

4. The method of claim 3, the phase shift region is surrounded by the region that is opaque to the drilling beam.

5. The method of claim 3, wherein a first portion of the drilling beam that passes through the phase shift region interferes destructively with a second portion of the drilling beam that passes through the opening.

6. The method of claim 3, wherein a spacing between the opening and the phase shift region equals to zero.

7. The method of claim 2, wherein the aperture comprises an opening that is surrounded by the phase shift region, a spacing between the opening and the phase shift region is to provide the destructive interference.

8. The method of claim 2, wherein the aperture comprises an opening that is surrounded by the phase shift region, the phase shift region has a thickness to provide the reversed phase.

9. A system, comprising:

a drilling beam source to provide one or more microvias in a semiconductor package with a drilling beam,

an aperture to reduce a spot size of the drilling beam that passes through the aperture, wherein the aperture has a phase shift region is partially transmissive to a drilling beam to form a microvia and reverses a phase of the drilling beam.

10. The system of claim 9, wherein:

the phase shift region comprises a dielectric layer that has a thickness to provide the reversed phase.

11. The system of claim 9, wherein:

the aperture comprises an opening that is transmissive to the drilling beam and surrounded by the phase shift region, a spacing between the opening and the phase shift region is to provide a destructive interference for a first portion of the drilling beam that passes through the opening and the second portion of the drilling beam that passes through the phase shift region.

12. The system of claim 10, wherein:

the phase shift region comprises a film on the dielectric layer to reduce an intensity of the drilling beam.

13. The system of claim 9, wherein:

the aperture comprises an opening that is transmissive to the drilling beam and surrounded by the phase shift region, a spacing between the opening and the phase shift region equals to zero.

14. The system of claim 9, wherein:

the aperture comprises an opening that is surrounded by the phase shift region and an region to surround the phase shift region.

15. The system of claim 9, wherein:

the aperture comprises an opening that is surrounded by the phase shift region, a first portion of the drilling beam that passes through the phase shift region interferes destructively with a second portion of the drilling beam that passes through the opening on the edge of the second portion.