METHOD OF FORMING A BOTTLE-SHAPED TRENCH BY ION IMPLANTATION

• US 20090170331A1
• Filed: 08/07/2008
• Published: 07/02/2009
• Est. Priority Date: 12/27/2007
• Status: Abandoned Application

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Radens, Carl, Faltermeier, Johnathan E., Cheng, Kangguo
• Application Number:
  US12/187,917
• Publication Number:
  US 20090170331A1
• Time in Patent Office: Days
• US Class Current: 438/705
• CPC Class Codes: H01L 21/0337 characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching

Abstract

Disclosed is a method of forming a bottle shaped trench in a substrate which includes forming at least one trench having an upper portion and a lower portion into a semiconductor substrate, the at least one trench having vertical sidewalls that extend to a common bottom wall; implanting ions into the semiconductor substrate abutting the upper portion of the at least one trench to form an amorphous region in the semiconductor substrate abutting the upper portion of the at least one trench; and etching the lower portion of the at least one trench selective to the amorphous region to provide an elongated bottom portion which extends laterally beyond the upper portion.

Claims

1. A method of forming a bottle shaped trench in a substrate, comprising:

forming at least one trench having an upper portion and a lower portion into a semiconductor substrate, said at least one trench having bare vertical sidewalls that extend to a common bottom wall;

implanting ions into said semiconductor substrate abutting the upper portion of said at least one trench to form an amorphous region in the semiconductor substrate abutting said upper portion of said at least one trench; and

etching said lower portion of said at least one trench selective to the amorphous region to provide an elongated bottom portion which extends laterally beyond said upper portion, wherein the semiconductor substrate abutting the lower portion of the trench remains a single crystal material.

2. The method of claim 1, further comprising:

annealing said amorphous region abutting the upper portion of the semiconductor substrate, at a temperature sufficient to recrystallize said amorphous region of said substrate.

3. The method of claim 1 wherein said implanting ions is performed using an angled ion implantation in which the angle between the ion beam and bare vertical sidewalls is from about 0.1 to 89.5 degrees.

4. The method of claim 3 wherein said implanting ions is performed at an energy from about 2 to about 800 keV using an ion dose of from about 2×

10¹⁸ to about 1×

10¹⁹ atoms/cm².

5. The method of claim 1 wherein said implanting ions includes selected at least one of argon, krypton, neon, helium, boron, indium, thallium, carbon, silicon, germanium, nitrogen, phosphorus, arsenic, sulfur, iodine, oxygen and boron fluoride.

6. The method of claim 1 wherein said etching includes a wet etch process including an etchant selected from ammonium hydroxide (NH₄OH), potassium hydroxide (KOH), tetramethylammonium hydroxide (TMAH), hydrazine, ethylene diamine pyrocatechol (EDP) and or a mix of hydrofluoric acid and nitric acid.

7. The method of claim 6 wherein said etchant comprising a 50:

1 concentration of H₂O;

NH₄OH and said etching is performed at 25°

C. to enlarge the lower portion of the trench without substantially etching the upper portion of the trench.

8. The method of claim 2 wherein said annealing is performed at a temperature from about 500°

C. to about 1200°

C. and in an inert gas ambient.

9. The method of claim 1 wherein said semiconductor substrate is a bulk semiconductor.

10. The method of claim 1 wherein said semiconductor substrate is a semiconductor-on-insulator.

11. The method of claim 1 wherein said implanting ions is performed using an ion implantation in which the angle between the ion beam and bare vertical sidewalls is 0 degrees thereby further forming an amorphous region beneath the common wall portion.

12. A method of forming a bottle shaped trench in a substrate, comprising:

implanting ions into said semiconductor substrate to render an upper surface thereof amorphous;

forming at least one trench having an upper amorphous region and a lower portion into a semiconductor substrate, said at least one trench having bare vertical sidewalls that extend to a common bottom wall; and

etching said lower portion of said at least one trench selective to the amorphous region to provide an elongated bottom portion which extends laterally beyond said upper portion, wherein the semiconductor substrate abutting the lower portion of the trench remains a single crystal material.

13. A method of forming a bottle shaped trench in a substrate, said method consisting essentially of:

forming at least one trench having an upper portion and a lower portion into a semiconductor substrate, said at least one trench having bare vertical sidewalls that extend to a common bottom wall;

implanting ions into said semiconductor substrate abutting the upper portion of said at least one trench to form an amorphous region in the semiconductor substrate abutting said upper portion of said at least one trench; and

etching said lower portion of said at least one trench selective to the amorphous region to provide an elongated bottom portion which extends laterally beyond said upper portion, wherein the semiconductor substrate abutting the lower portion of the trench remains a single crystal material.

14. The method of claim 13, further comprising:

annealing said amorphous region abutting the upper portion of the semiconductor substrate, at a temperature sufficient to recrystallize said amorphous region of said substrate.

15. The method of claim 13 wherein said implanting ions is performed using an angled ion implantation in which the angle between the ion beam and bare vertical sidewalls is from about 0.1 to 89.5 degrees.

16. The method of claim 15 wherein said implanting ions is performed at an energy from about 2 to about 800 keV using an ion dose of from about 2×

10¹⁸ to about 1×

10¹⁹ atoms/cm².

17. The method of claim 13 wherein said implanting ions includes selected at least one of argon, krypton, neon, helium, boron, indium, thallium, carbon, silicon, germanium, nitrogen, phosphorus, arsenic, sulfur, iodine, oxygen and boron fluoride.

18. The method of claim 13 wherein said etching includes a wet etch process including an etchant selected from ammonium hydroxide (N₄OH), potassium hydroxide (KOH), tetramethylammonium hydroxide (TMAH), hydrazine, ethylene diamine pyrocatechol (EDP) and or a mix of hydrofluoric acid and nitric acid.

19. The method of claim 18 wherein said etchant comprising a 50:

1 concentration of H₂O;

NH₄OH and said etching is performed at 25°

C. to enlarge the lower portion of the trench without substantially etching the upper portion of the trench.

20. The method of claim 13 wherein said implanting ions is performed using an ion implantation in which the angle between the ion beam and bare vertical sidewalls is 0 degrees thereby further forming an amorphous region beneath the common wall portion.