SEMICONDUCTOR LIGHT-EMITTING DEVICE, ILLUMINATOR AND METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING DEVICE
First Claim
1. A semiconductor light-emitting device comprising:
- a support substrate (1);
a first eutectic alloy layer (2a) formed on said support substrate;
a second eutectic alloy layer (2b) formed on said first eutectic alloy layer;
a third eutectic alloy layer (2c) formed on said second eutectic alloy layer; and
a semiconductor element layer (3) including an emission layer (3d) formed on said third eutectic alloy layer, whereinthe melting point of said second eutectic alloy layer is lower than the melting points of said first eutectic alloy layer and said third eutectic alloy layer.
4 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor light-emitting device having high reliability is obtained while suppressing separation between a support substrate and a semiconductor element layer. This semiconductor light-emitting device includes a support substrate (1), a first bonding layer (2a) formed on the support substrate (1), a second bonding layer (2b) formed on the first bonding layer (2a), a third bonding layer (2c) formed on the second bonding layer (2b), and a semiconductor element layer (3) formed on the third bonding layer (2c). The melting point of the second bonding layer (2b) is lower than the melting points of the first bonding layer (2a) and the third bonding layer (2c).
-
Citations
19 Claims
-
1. A semiconductor light-emitting device comprising:
-
a support substrate (1); a first eutectic alloy layer (2a) formed on said support substrate; a second eutectic alloy layer (2b) formed on said first eutectic alloy layer; a third eutectic alloy layer (2c) formed on said second eutectic alloy layer; and a semiconductor element layer (3) including an emission layer (3d) formed on said third eutectic alloy layer, wherein the melting point of said second eutectic alloy layer is lower than the melting points of said first eutectic alloy layer and said third eutectic alloy layer. - View Dependent Claims (2, 3, 4, 5, 6)
-
-
7. An illuminator comprising a semiconductor light-emitting device including:
-
a support substrate (1); a first eutectic alloy layer (2a) formed on said support substrate; a second eutectic alloy layer (2b) formed on said first eutectic alloy layer; a third eutectic alloy layer (2c) formed on said second eutectic alloy layer; and a semiconductor element layer (3) including an emission layer (3d) formed on said third eutectic alloy layer, wherein the melting point of said second eutectic alloy layer is lower than the melting points of said first eutectic alloy layer and said third eutectic alloy layer. - View Dependent Claims (8, 9, 10)
-
-
11. A method of manufacturing a semiconductor light-emitting device, comprising steps of:
-
forming a semiconductor element layer (3) including an emission layer (3d); arranging, between a support substrate (1) and said semiconductor element layer, a first eutectic alloy layer (2a), a second eutectic alloy layer (2b) and a third eutectic alloy layer (2c) in this order from the side of said support substrate; and bonding said semiconductor element layer and said support substrate to each other through said first eutectic alloy layer, said second eutectic alloy layer and said third eutectic alloy layer by heating the same, wherein the melting point of said second eutectic alloy layer is lower than the melting points of said first eutectic alloy layer and said third eutectic alloy layer, and a heating temperature in the step of bonding said semiconductor element layer and said support substrate to each other is at least the melting point of said second eutectic alloy layer and less than the melting points of said first eutectic alloy layer and said third eutectic alloy layer. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
-
Specification