Led Semiconductor Body and Use of an Led Semiconductor body

• US 20090173961A1
• Filed: 12/13/2006
• Published: 07/09/2009
• Est. Priority Date: 12/30/2005
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Gröninger, Günther, Heidborn, Peter, Jung, Christian, Windisch, Reiner, Wegleiter, Walter
• Granted Patent: US 7,932,526 B2
• Time in Patent Office: Days
• US Class Current: 257/99
• CPC Class Codes: H01L 25/0756 Stacked arrangements of devices
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/0016 having at least two p-n junctions
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector

Abstract

An LED semiconductor body comprising a first radiation-generating active layer and a second radiation-generating active layer, the first active layer and the second active layer being arranged one above another in the vertical direction.

Claims

1. An LED semiconductor body comprising a first radiation-generating active layer and a second radiation-generating active layer, the first active layer and the second active layer being arranged one above another in vertical direction.

2. The LED semiconductor body according to claim 1, the first and the second active layer being monolithically integrated in the semiconductor body.

3. The LED semiconductor body according to claim 1, the first and the second active layer in each case generating incoherent radiation.

4. The LED semiconductor body according to claim 1, the first and the second active layer in each case generating radiation having a similar wavelength.

5. The LED semiconductor body according to claim 1, the first and the second active layer generating radiation having different wavelengths.

6. The LED semiconductor body according to claim 1, a tunnel junction being formed between the first and the second active layer.

7. The LED semiconductor body according to claim 6, the tunnel junction being formed by means of a highly doped layer of a first conductivity type and a highly doped layer of a second conductivity type.

8. The LED semiconductor body according to claim 1, a connecting layer of a first conductivity type being arranged between the first and the second active layer, and a layer of a second conductivity type in each case being arranged on that side of the first and of the second active layer which is remote from the connecting layer.

9. The LED semiconductor body according to claim 8, the connecting layer being electrically connectable by means of a contact.

10. The LED semiconductor body according to claim 8, the outer layers of the second conductivity type being electrically connected by means of an external contact-connection.

11. The LED semiconductor body according to claim 1, the LED semiconductor body being arranged on a carrier element.

12. The LED semiconductor body according to claim 11, the carrier element being electrically conductive and/or transmissive to the radiation generated.

13. The LED semiconductor body according to claim 11, a rear side contact being arranged on a side of the carrier element which is remote from the LED semiconductor body.

14. The LED semiconductor body according to claim 11, the LED semiconductor body being grown on the carrier element.

15. The LED semiconductor body according to claim 11, the LED semiconductor body being grown on a growth substrate that is different from the carrier element.

16. The LED semiconductor body according to claim 15, the growth substrate being removed from the semiconductor body.

17. The LED semiconductor body according to claim 1, wherein, the semiconductor body, includes InGaAlAs or InGaAlP.

18. The LED semiconductor body according to claim 1, wherein, the semiconductor body includes InGaAlN.

19. The LED semiconductor body according to claim 1, wherein the semiconductor body emits radiation in the vertical direction.

23. The LED semiconductor body of claim 17, wherein the InGaAlAs or InGaAlP is included in at least one of the two active layers.

24. The LED semiconductor body of claim 18, wherein the InGaAlN is included in at least one of the two active layers.

20-22. -22. (canceled)