METHOD OF FORMING A CARBON NANOTUBE-BASED CONTACT TO SEMICONDUCTOR
First Claim
1. A conductive article comprising:
- a semiconductor material substrate;
a patterned conductive trace disposed on the semiconductor material substrate wherein the trace includes;
a non-woven nanotube fabric layer comprising a plurality ofunaligned nanotubes providing a plurality of conductive pathways along the extent of the trace, anda metal layer adjacent to the non-woven nanotube fabric layer.
4 Assignments
0 Petitions
Accused Products
Abstract
Manufacturers encounter limitations in forming low resistance ohmic electrical contact to semiconductor material P-type Gallium Nitride (p-GaN), commonly used in photonic applications, such that the contact is highly transparent to the light emission of the device. Carbon nanotubes (CNTs) can address this problem due to their combined metallic and semiconducting characteristics in conjunction with the fact that a fabric of CNTs has high optical transparency. The physical structure of the contact scheme is broken down into three components, a) the GaN, b) an interface material and c) the metallic conductor. The role of the interface material is to make suitable contact to both the GaN and the metal so that the GaN, in turn, will make good electrical contact to the metallic conductor that interfaces the device to external circuitry. A method of fabricating contact to GaN using CNTs and metal while maintaining protection of the GaN surface is provided.
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Citations
29 Claims
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1. A conductive article comprising:
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a semiconductor material substrate; a patterned conductive trace disposed on the semiconductor material substrate wherein the trace includes; a non-woven nanotube fabric layer comprising a plurality of unaligned nanotubes providing a plurality of conductive pathways along the extent of the trace, and a metal layer adjacent to the non-woven nanotube fabric layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A light-emitting semiconductor device comprising:
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a semiconductor material substrate; a metal contact in electrical communication with the semiconductor; an interface structure comprising a nonwoven nanotube fabric layer and a metal layer, wherein said interface structure; is interposed between the metal contact and the semiconductor; electrically couples the metal contact to the semiconductor; and includes at least one active region, adjacent to said metal contact, that is at least partially optically transparent in at least a portion of the visible light range. - View Dependent Claims (15, 16, 17)
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18. A method of making a conductive article on a semiconductor comprising:
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providing a semiconductor; forming on the semiconductor a conductive trace including a nonwoven nanotube fabric layer and a thin metal layer; depositing a mask layer over the conductive trace; defining a pattern in the mask layer, the pattern corresponding to the shape of the article; and removing portions of the nanotube fabric layer and portions of the metal layer in accordance with the pattern of the mask layer so that the remaining conductive trace forms the conductive article and the semiconductor is substantially preserved. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
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Specification