Dense arrays and charge storage devices
First Claim
Patent Images
1. A three terminal nonvolatile memory cell, comprising:
- a diode;
a control gate; and
a charge storage medium located between the diode and the control gate.
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Abstract
There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.
275 Citations
20 Claims
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1. A three terminal nonvolatile memory cell, comprising:
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a diode; a control gate; and a charge storage medium located between the diode and the control gate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. An array of nonvolatile memory cells, comprising:
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a first nonvolatile memory cell comprising a first vertical diode located over a substrate and a first charge storage medium located adjacent to a side of the first vertical diode; a second nonvolatile memory cell comprising a second vertical diode located over the substrate and a second charge storage medium located adjacent to a side of the second vertical diode; a control gate which is located between and contacts the first charge storage medium and the second charge storage medium; wherein; the first nonvolatile memory cell is located adjacent to the second nonvolatile memory cell; and the control gate is shared between the first and the second nonvolatile memory cells. - View Dependent Claims (19, 20)
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Specification