Field Effect Transistor
First Claim
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1. A field effect transistor having a gate electrode, a source electrode and a drain electrode, comprising:
- a channel layer formed of an oxide semiconductor containing at least one selected from the group consisting of In, Zn, and Sn; and
a gate insulating layer arranged between the channel layer and the gate electrode,wherein the gate insulating layer comprises an amorphous oxide containing Ga as a main component.
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Abstract
Provided is a field effect transistor, provided with a gate electrode 15, a source electrode 13, and a drain electrode 14 formed on a substrate, including a channel layer 11 formed of an oxide containing In, Zn, or Sn as the main component, and a gate insulating layer 12 provided between the channel layer 11 and the gate electrode 15, in which the gate insulating layer 12 is formed of an amorphous oxide containing Ga as the main component.
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6 Claims
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1. A field effect transistor having a gate electrode, a source electrode and a drain electrode, comprising:
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a channel layer formed of an oxide semiconductor containing at least one selected from the group consisting of In, Zn, and Sn; and a gate insulating layer arranged between the channel layer and the gate electrode, wherein the gate insulating layer comprises an amorphous oxide containing Ga as a main component. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification