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Field Effect Transistor

  • US 20090174012A1
  • Filed: 01/11/2007
  • Published: 07/09/2009
  • Est. Priority Date: 01/30/2006
  • Status: Active Grant
First Claim
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1. A field effect transistor having a gate electrode, a source electrode and a drain electrode, comprising:

  • a channel layer formed of an oxide semiconductor containing at least one selected from the group consisting of In, Zn, and Sn; and

    a gate insulating layer arranged between the channel layer and the gate electrode,wherein the gate insulating layer comprises an amorphous oxide containing Ga as a main component.

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