PLASMA CURING OF PATTERNING MATERIALS FOR AGGRESSIVELY SCALED FEATURES

• US 20090174036A1
• Filed: 01/04/2008
• Published: 07/09/2009
• Est. Priority Date: 01/04/2008
• Status: Abandoned Application

• Current Assignee: GlobalFoundries, Inc., Toshiba America Electronic Components Incorporated (Toshiba Corporation)
• Original Assignee: International Business Machines Corporation, Toshiba America Electronic Components Incorporated (Toshiba Corporation)
• Inventors: Guillorn, Michael A., Yagishita, Atsushi, Fuller, Nicholas C., Kawasaki, Hirohisa
• Application Number:
  US11/969,525
• Publication Number:
  US 20090174036A1
• Time in Patent Office: Days
• US Class Current: 257/618
• CPC Class Codes: G03F 7/40 Treatment after imagewise removal, e.g. baking

Abstract

A methodology is disclosed that enables the fabrication of semiconductor devices (i.e., STI structures, gates, and interconnects) with significantly reduced line edge roughness (LER) and line width roughness (LEW) post lithography patterning. The inventive methodology entails the use of an inert species containing plasma tuned to enhanced its'"'"' vacuum ultra violet (VUV) emissions post lithography and/or post one of the etch processes of a given feature (on an identical etch platform) to entice increased crosslinking of one or more patterning materials, thus enabling increased etch resistance and reduced LER and LEW post etching processing.

Claims

1. A method of fabricating a semiconductor structure having reduced line edge roughness/line width roughness values, comprising:

exposing at least one preprocessed patterning material located on a substrate to vacuum ultra violet (VUV) emissions to induce crosslinking of said at least one preprocessed patterning material, said VUV emissions are generated by an inert species containing plasma.

2. The method of claim 1 wherein said inert species containing plasma comprises at least one of He, Kr, Ar, Xe and Ne.

3. The method of claim 1 wherein said inert species containing plasma comprises He.

4. The method of claim 1 wherein said VUV emissions are generated by subjecting said inert species containing plasma to a pressure of less than 100 mT, a source power of greater than 500 W, a bias power of less than 50 W and a substrate temperature of less than, or equal to, 60°

C.

5. The method of claim 4 wherein said pressure is less than 50 mT and said bias power is 0 W.

6. The method of claim 1 wherein said preprocessed patterning material is at least one of a photoresist, a patternable low k dielectric, an planarizing organic material and an antireflective coating (ARC).

7. The method of claim 1 wherein said preprocessed patterning material is subjected to lithography prior to said exposing.

8. The method of claim 1 wherein said preprocessed patterning material is subjected to at least one etching step prior to said exposing.

9. The method of claim 1 wherein said preprocessed patterning material is subjected to lithography and at least one etching step prior to said exposing.

10. The method of claim 1 wherein said substrate further includes at least one material layer to be subsequently patterned during a subsequent etching step.

11. The method of claim 10 wherein said at least one material layer comprises a semiconductor material, a dielectric material, a conductive material or any combination or multilayered stack thereof.

12. The method of claim 11 wherein said at least one material layer is a dielectric material of a FET structure, an interconnect structure, or an insulator structure.

13. The method of claim 11 wherein said at least one material layer is a conductive material of a FET structure.

14. A semiconductor structure comprising at least one feature defined by a patterned material layer, wherein said at least one feature has a line edge roughness (LER) of 1.4 nm or less and a line width roughness (LWR) of 2.3 nm or less.

15. The semiconductor structure of claim 14 wherein said patterned material layer comprises a semiconductor material, a dielectric material, a conductive material or any combination or multilayered stack thereof.

16. The semiconductor structure of claim 15 wherein said patterned material layer is a dielectric material of a FET structure, an interconnect structure, or an insulator structure.

17. The semiconductor structure of claim 15 wherein said patterned material layer is a conductive material of a FET structure.

18. The semiconductor structure of claim 15 wherein said patterned material layer includes a stack of a conductive material located atop a dielectric material.