ELECTRONIC COMPONENT, SEMICONDUCTOR PACKAGE, AND ELECTRONIC DEVICE

• US 20090174052A1
• Filed: 05/22/2007
• Published: 07/09/2009
• Est. Priority Date: 05/29/2006
• Status: Abandoned Application

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: NEC Corporation, NEC Electronics Corporation (Renesas Electronics Corporation)
• Inventors: Yamazaki, Takao, Takahashi, Nobuaki, Sogawa, Yoshimichi
• Application Number:
  US12/298,285
• Publication Number:
  US 20090174052A1
• Time in Patent Office: Days
• US Class Current: 257/690
• CPC Class Codes: H01L 21/563 Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
• CPC Class Codes: H01L 2224/0345 Physical vapour deposition [PVD], e.g. evaporation, or sputtering
• CPC Class Codes: H01L 2224/03462 Electroplating
• CPC Class Codes: H01L 2224/03464 Electroless plating
• CPC Class Codes: H01L 2224/0362 Photolithography
• CPC Class Codes: H01L 2224/03828 Applying flux
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05073 Single internal layer
• CPC Class Codes: H01L 2224/05082 Two-layer arrangements
• CPC Class Codes: H01L 2224/05083 Three-layer arrangements
• CPC Class Codes: H01L 2224/05084 Four-layer arrangements
• CPC Class Codes: H01L 2224/05118 Zinc [Zn] as principal constituent
• CPC Class Codes: H01L 2224/05147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05155 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05157 Cobalt [Co] as principal constituent
• CPC Class Codes: H01L 2224/0516 Iron [Fe] as principal constituent
• CPC Class Codes: H01L 2224/05164 Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05169 Platinum [Pt] as principal constituent
• CPC Class Codes: H01L 2224/05171 Chromium [Cr] as principal constituent
• CPC Class Codes: H01L 2224/05552 : in top view
• CPC Class Codes: H01L 2224/05571 : the external layer being disposed in a recess of the surface
• CPC Class Codes: H01L 2224/05647 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05655 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/1132 : Screen printing, i.e. using a stencil
• CPC Class Codes: H01L 2224/1145 : Physical vapour deposition [PVD], e.g. evaporation, or sputtering
• CPC Class Codes: H01L 2224/11462 : Electroplating
• CPC Class Codes: H01L 2224/1147 : using a lift-off mask
• CPC Class Codes: H01L 2224/115 : by chemical or physical modification of a pre-existing or pre-deposited material
• CPC Class Codes: H01L 2224/11502 : Pre-existing or pre-deposited material
• CPC Class Codes: H01L 2224/1152 : Self-assembly, e.g. self-agglomeration of the bump material in a fluid
• CPC Class Codes: H01L 2224/11849 : Reflowing
• CPC Class Codes: H01L 2224/13006 : Bump connector larger than the underlying bonding area, e.g. than the under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/13022 : the bump connector being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/13111 : Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/16225 : the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32225 : the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/73204 : the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/75702 : in the upper part of the bonding apparatus, e.g. in the bonding head
• CPC Class Codes: H01L 2224/8121 : using a reflow oven
• CPC Class Codes: H01L 2224/81447 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/81455 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/81815 : Reflow soldering
• CPC Class Codes: H01L 2224/83104 : by applying pressure, e.g. by injection
• CPC Class Codes: H01L 23/24 : solid or gel at the normal operating temperature of the device H01L23/3135 takes precedence
• CPC Class Codes: H01L 23/3128 : the substrate having spherical bumps for external connection
• CPC Class Codes: H01L 23/49816 : Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
• CPC Class Codes: H01L 23/49866 : characterised by the materials materials of the substrates H01L23/14, of the lead-frames H01L23/49579
• CPC Class Codes: H01L 24/03 : Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/75 : Apparatus for connecting with bump connectors or layer connectors
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/0002 : Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01007 : Nitrogen [N]
• CPC Class Codes: H01L 2924/01011 : Sodium [Na]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01327 : Intermediate phases, i.e. intermetallics compounds
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/3512 : Cracking
• CPC Class Codes: H01L 2924/3651 : Formation of intermetallics
• CPC Class Codes: H05K 3/244 : Finish plating of conductors, especially of copper conductors, e.g. for pads or lands selective plating methods H05K3/243; finish plating of conductors made by printing techniques H05K3/246; solder as finish H05K3/3457, e.g. by plating H05K3/3473
• CPC Class Codes: H05K 3/3436 : having an array of bottom contacts, e.g. pad grid array or ball grid array components
• CPC Class Codes: H05K 3/3463 : Solder compositions in relation to features of the printed circuit board or the mounting process

Abstract

In a conventional UBM made of, for example, Cu, Ni, or NiP, there has been a problem that when an electronic component is held in high-temperature conditions for an extended period, the barrier characteristic of the UBM is lost and the bonding strength decreases due to formation of a brittle alloy layer at a bonding interface. The present invention improves the problem of decrease in long-term connection reliability of a solder connection portion after storage at high temperatures. An electronic component comprises the electronic component includes an electrode pad formed on a substrate or a semiconductor element and a barrier metal layer formed to cover the electrode pad and the barrier metal layer comprises a CuNi alloy layer on the side opposite the side in contact with the electrode pad, the CuNi alloy layer containing 15 to 60 at % of Cu and 40 to 85 at % of Ni.

Claims

1. An electronic component comprising:

an electrode pad formed on a substrate or a semiconductor element; and

a barrier metal layer formed to cover the electrode pad,

wherein the barrier metal layer comprises a CuNi alloy layer containing 15 to 60 at % of Cu and 40 to 85 at % of Ni on the side opposite the electrode pad.

2. The electronic component according to claim 1, wherein the average Ni/Cu ratio in the CuNi alloy layer ranges from 0.67 to 5.7.

6. The electronic component according to claim 1,

wherein an intermediate layer is further formed between the electrode pad and the barrier metal layer.

7. The electronic component according to claim 6,

wherein the intermediate layer contains Ni, an NiP alloy, or an NiB alloy.

8. An electronic device,

wherein the electronic device comprises the electronic component according to claim 1.

3. An electronic component comprising:

an electrode pad formed on a substrate or a semiconductor element; and

a barrier metal layer formed to cover the electrode pad,

wherein the barrier metal layer comprises a CuNiP alloy layer containing 15 at % or higher of Cu, 40 at % or higher of Ni, and above 0 at % and 25 at % or lower of P on the side opposite the electrode pad.

4. The electronic component according to claim 3,

wherein the average Ni/Cu ratio in the CuNiP alloy layer ranges from 0.60 to 5.5.

18. The electronic component according to claim 3,

wherein an intermediate layer is further formed between the electrode pad and the barrier metal layer.

20. The electronic component according to claim 18,

wherein the intermediate layer contains Ni, an NiP alloy, or an NiB alloy.

22. An electronic device,

wherein the electronic device comprises the electronic component according to claim 3.

5. An electronic component comprising:

an electrode pad formed on a substrate or a semiconductor element; and

a barrier metal layer formed to cover the electrode pad,

wherein the barrier metal layer comprises a CuNiP alloy layer on the side opposite the electrode pad, the CuNiP alloy layer containing 44 to 60 at % of Cu, 29 to 40 at % of Ni, and 8 to 16 at % of P with the content of Ni being at least 2.5 times the content of P.

19. The electronic component according to claim 5,

wherein an intermediate layer is further formed between the electrode pad and the barrier metal layer.

21. The electronic component according to claim 19,

wherein the intermediate layer contains Ni, an NiP alloy, or an NiB alloy.

23. An electronic device,

wherein the electronic device comprises the electronic component according to claim 5.

9. A semiconductor package comprising:

a plurality of electronic members formed of at least one of a substrate and a semiconductor element;

an electrode pad formed on each of the electronic members;

a barrier metal layer formed to cover the electrode pad;

a CuNiSn alloy layer having an average Ni/Cu ratio of 2.3 or lower formed to cover the barrier metal layer; and

a solder bump formed to electrically connect the electrode pads to each other formed on the different electronic members via the barrier metal layers and the CuNiSn alloy layers,

wherein the barrier metal layer comprises a CuNi alloy layer that is in contact with the CuNiSn alloy layer, the CuNi alloy layer containing 15 to 60 at % of Cu and 40 to 85 at % of Ni.

10. The semiconductor package according to claim 9,

wherein the average Ni/Cu ratio in the CuNi alloy layer ranges from 0.67 to 5.7.

14. The semiconductor package according to claim 9,

wherein an intermediate layer is further formed between the electrode pad and the barrier metal layer.

15. The semiconductor package according to claim 14,

wherein the intermediate layer contains Ni, an NiP alloy, or an NiB alloy.

16. The semiconductor package according to claim 9,

wherein the region ranging from the barrier metal layer to the solder bump contains no Au.

17. An electronic device,

wherein the electronic device comprises the semiconductor package according to claim 9.

11. A semiconductor package comprising:

a plurality of electronic members formed of at least one of a substrate and a semiconductor element;

an electrode pad formed on each of the electronic members;

a barrier metal layer formed to cover the electrode pad;

a CuNiSn alloy layer having an average Ni/Cu ratio of 2.3 or lower formed to cover the barrier metal layer;

a P-containing P-rich NiCuSnP layer or a P-containing P-rich NiSnP layer formed between the barrier metal layer and the CuNiSn alloy layer; and

a solder bump formed to electrically connect the electrode pads to each other formed on the different electronic members via the barrier metal layers, the CuNiSn alloy layers, and either the P-containing P-rich NiCuSnP layers or the P-containing P-rich NiSnP layers,

wherein the barrier metal layer comprises a CuNiP alloy layer that is in contact with the P-containing P-rich NiCuSnP layer or the P-containing P-rich NiSnP layer, the CuNiP alloy layer containing 15 at % or higher of Cu, 40 at % or higher of Ni, and above 0 at % and 25 at % or lower of P.

12. The semiconductor package according to claim 11,

wherein the average Ni/Cu ratio in the CuNiP alloy layer ranges from 0.60 to 5.5.

24. The semiconductor package according to claim 11,

wherein an intermediate layer is further formed between the electrode pad and the barrier metal layer.

26. The semiconductor package according to claim 24,

wherein the intermediate layer contains Ni, an NiP alloy, or an NiB alloy.

28. The semiconductor package according to claim 11,

wherein the region ranging from the barrier metal layer to the solder bump contains no Au.

30. An electronic device,

wherein the electronic device comprises the semiconductor package according to claim 11.

13. A semiconductor package comprising:

a plurality of electronic members formed of at least one of a substrate and a semiconductor element;

an electrode pad formed on each of the electronic members;

a barrier metal layer formed to cover the electrode pad;

a CuNiSn alloy layer having an average Ni/Cu ratio of 2.3 or lower formed to cover the barrier metal layer;

a P-containing P-rich NiCuSnP layer or a P-containing P-rich NiSnP layer formed between the barrier metal layer and the CuNiSn alloy layer; and

a solder bump formed to electrically connect the electrode pads to each other formed on the different electronic members via the barrier metal layers, the CuNiSn alloy layers, and either the P-containing P-rich NiCuSnP layers or the P-containing P-rich NiSnP layers,

wherein the barrier metal layer comprises a CuNiP alloy layer that is in contact with the P-containing P-rich NiCuSnP layer or the P-containing P-rich NiSnP layer, the CuNiP alloy layer containing 44 to 60 at % of Cu, 29 to 40 at % of Ni, and 8 to 16 at % of P with the content of Ni being at least 2.5 times the content of P.

25. The semiconductor package according to claim 13,

wherein an intermediate layer is further formed between the electrode pad and the barrier metal layer.

27. The semiconductor package according to claim 25,

wherein the intermediate layer contains Ni, an NiP alloy, or an NiB alloy.

29. The semiconductor package according to claim 13,

wherein the region ranging from the barrier metal layer to the solder bump contains no Au.

31. An electronic device,

wherein the electronic device comprises the semiconductor package according to claim 13.