CURRENT SWITCH CIRCUIT AND D/A CONVERTER, SEMICONDUCTOR INTEGRATED CIRCUIT, AND COMMUNICATION DEVICE USING THE SAME

• US 20090174587A1
• Filed: 10/23/2007
• Published: 07/09/2009
• Est. Priority Date: 01/10/2007
• Status: Active Grant

• Current Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Original Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Inventors: Ogawa, Tomohiro, Ikoma, Heiji
• Granted Patent: US 7,796,073 B2
• Time in Patent Office: Days
• US Class Current: 341/144
• CPC Class Codes: H03K 17/302 in field-effect transistor switches
• CPC Class Codes: H03K 17/687 the devices being field-effect transistors
• CPC Class Codes: H03K 2217/0018 Special modifications or use of the back gate voltage of a FET
• CPC Class Codes: H03M 1/742 using current sources as quantisation value generators

Abstract

[Means for Solving the Problem] In a current switch circuit A used for a current steering D/A converter, a current switch basic circuit 1 includes first and second transistors Tr121 and Tr122 included in a differential switch 12. A threshold voltage control circuit 5 has an output terminal Vbout controlling the substrate voltage to be outputted to the substrate terminal of each of the two transistors Tr121 and Tr122 included in the differential switch 12 for controlling the threshold voltage of the two transistors of the differential switch. Accordingly, the present invention improves the decrease in the dynamic range of the current switch basic circuit 1 dependent on the threshold of each of the two transistors in the differential switch 12 and realizes a wider output voltage range without causing deterioration in properties even in a case that the power voltage is reduced in the current switch basic circuit 1.

Claims

1. A current switch circuit comprising a current source and a differential switch connected to an output terminal of the current source, wherein

the current source includes at least one transistor having a gate terminal to which a bias voltage is applied that determines a value of a current to conduct,

the differential switch includes first and second transistors, each of the transistors having source terminals connected to the output terminal of the current source in parallel, drain terminals as first and second output terminals respectively, and gate terminals to which complementary signals are inputted, and

the current switch circuit further comprises a threshold voltage control circuit for outputting a substrate voltage to a substrate terminal of each of the first and second transistors to adjust a threshold voltage of the first and second transistors.

2. The current switch circuit according to claim 1, wherein the threshold voltage control circuit includes:

a reference voltage generating circuit for generating a reference voltage to determine the threshold voltage; and

a substrate voltage control circuit for controlling a substrate voltage of a threshold voltage monitoring transistor in such a way that a voltage difference between the reference voltage generated in the reference voltage generating circuit and the bias voltage becomes the threshold voltage of the first and second transistors of the differential switch.

3. The current switch circuit according to claim 2, wherein the substrate voltage control circuit of the threshold voltage control circuit includes a threshold voltage monitoring circuit for monitoring that the threshold voltage of the monitoring transistor becomes the threshold voltage of the first and second transistors of the differential switch.

4. The current switch circuit according to claim 3, wherein the threshold voltage monitoring circuit includes the threshold voltage monitoring transistor.

5. The current switch circuit according to claim 4, wherein a gate length of the threshold voltage monitoring transistor included in the threshold voltage monitoring circuit is determined as equal to a gate length of the first and second transistors included in the differential switch.

7. The current switch circuit according to claim 1, wherein each of the first and second transistors is formed of a field effect transistor.

8. The current switch circuit according to claim 7, wherein the field effect transistor is a P channel type transistor.

9. The current switch circuit according to claim 7, wherein the field effect transistor is an N channel type transistor.

10. The current switch circuit according to claim 1, wherein

the transistor included in the current source is formed of a low voltage withstanding transistor having a gate insulating film with a predetermined thickness,

each of the first and second transistors included in the differential switch is formed of a high voltage withstanding transistors having a gate insulating film with a thickness thicker than the predetermined thickness of the gate insulating film of the low voltage withstanding transistor, and

the threshold voltage of the first and second transistors included in the differential switch is determined higher than a threshold voltage of the transistor included in the current source.

11. The current switch circuit according to claim 1, wherein

each of the first and second transistors included in the differential switch has an implantation concentration of impurities which is determined to be different from an implantation concentration of impurities to the transistor included in the current source, and

the threshold voltage of the first and second transistors included in the differential switch is determined higher than a threshold voltage of the transistor included in the current source.

12. The current switch circuit according to claim 7, wherein

the transistor included in the current source has a substrate terminal to which a predetermined voltage is applied,

a voltage higher than the predetermined voltage is applied to the substrate terminal of each of the first and second transistors included in the differential switch, and

the threshold voltage of the first and second transistors included in the differential switch is determined to be higher than a threshold voltage of the transistor included in the current source.

13. A D/A converter comprising the current switch circuit according to claim 1.

14. A D/A converter comprising a plurality of current switch circuits, each current switch circuit set forth in claim 4, wherein the threshold voltage monitoring transistor has a gate width determined to be equal to or more than a gate width of the transistor included in the differential switch circuit in a current switch circuit for LSB among the plurality of current switch circuits.

15. A semiconductor integrated circuit comprising the D/A converter according to claim 13.

16. A communication device comprising the semiconductor integrated circuit according to claim 15.

6. A current switch circuit comprising a current source and a differential switch connected to an output terminal of the current source, wherein

the current source includes at least one transistor having a gate terminal to which a bias voltage is applied that determines a value of a current to conduct,

the differential switch includes first and second transistors, the transistors having source terminals connected to an output terminal of the current source in parallel, drain terminals as first and second output terminals respectively, and gate terminals to which complementary signals are inputted, and

the first and second transistors of the differential switch has the threshold voltage determined to have an absolute value greater than an absolute value of a threshold voltage of the transistor included in the current source.

17. A threshold voltage control circuit comprising:

a reference voltage generating circuit;

a first transistor;

a substrate voltage control circuit for controlling a substrate voltage of the first transistor in such a way that a voltage difference between a reference voltage generated in the reference voltage generating circuit and a bias voltage becomes a threshold voltage of the first transistor; and

a second transistor having the same threshold voltage characteristics as that of the first transistor and including a substrate terminal to which an output voltage of the substrate voltage control circuit is input.