SUBSTRATE PROCESSING APPARATUS
First Claim
1. A substrate processing method, comprising:
- with a substrate processing apparatus including;
a reaction container for accommodating a substrate, the reaction container forming a space where the substrate is subjected to desired processing using a first reaction gas and a second reaction gas;
an exhaust port in the reaction container for exhausting gas from the reaction container;
a gas supply system for supplying the first reaction gas and the second reaction gas and a cleaning gas to the reaction container; and
a controller for controlling the gas supply system,subjecting the substrate to desired processing using the first reaction gas and the second reaction gas;
removing the processed substrate from the reaction container;
supplying the cleaning gas to the reaction container;
exhausting the cleaning gas from the reaction container; and
before processing an additional substrate, supplying the first reaction gas to the reaction container, exhausting the first reaction gas from the reaction container, and supplying the second reaction gas to the reaction container.
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Accused Products
Abstract
A substrate processing device comprises a reaction vessel 11 forming a space receiving a substrate 1 and adapted to have a plurality of reaction gases supplied thereto to perform desired processing of the substrate, an exhaust port 16 formed in the reaction vessel 11 for exhausting the reaction vessel 11, and a gas supply system 70A, 70B for supplying at least a plurality of reaction gases into the reaction vessel 11, the gas supply system 70A, 70B including a cleaning gas supply unit for supplying a cleaning gas to perform desired processing of the substrate 1 to thereby remove adherents in the reaction vessel 11, and a post-processing gas supply unit for supplying a post-processing gas capable of removing the elements contained in the cleaning gas remaining in the reaction vessel 11 after the adherents have been removed by supplying the cleaning gas, the post-processing gas containing all of the reaction gases used in performing desired processing of the substrate.
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Citations
8 Claims
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1. A substrate processing method, comprising:
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with a substrate processing apparatus including; a reaction container for accommodating a substrate, the reaction container forming a space where the substrate is subjected to desired processing using a first reaction gas and a second reaction gas; an exhaust port in the reaction container for exhausting gas from the reaction container; a gas supply system for supplying the first reaction gas and the second reaction gas and a cleaning gas to the reaction container; and a controller for controlling the gas supply system, subjecting the substrate to desired processing using the first reaction gas and the second reaction gas; removing the processed substrate from the reaction container; supplying the cleaning gas to the reaction container; exhausting the cleaning gas from the reaction container; and before processing an additional substrate, supplying the first reaction gas to the reaction container, exhausting the first reaction gas from the reaction container, and supplying the second reaction gas to the reaction container. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification
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- Resources
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Current AssigneeHitachi Kokusai Electric Incorporated (Hitachi, Ltd.)
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Original AssigneeHitachi Kokusai Electric Incorporated (Hitachi, Ltd.)
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InventorsSAKAI, Masanori, Okuda, Kazuyuki, Shima, Nobuhito
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Application NumberUS12/403,667Publication NumberTime in Patent OfficeDaysField of SearchUS Class Current427/255.280CPC Class CodesC23C 16/4405 Cleaning of reactor or part...C23C 16/45536 Use of plasma, radiation or...
