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EXPOSURE MASK

  • US 20090176073A1
  • Filed: 03/13/2009
  • Published: 07/09/2009
  • Est. Priority Date: 08/12/2005
  • Status: Abandoned Application
First Claim
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1. A semiconductor device manufactured using an exposure mask wherein a phase difference Δ

  • θ

    of i-line (365 nm) which transmits through a transparent region and a semi-transparent region of the exposure mask and a transmittance n of the semi-transparent region with respect to the exposure light satisfy Formula 1.
    Δ

    θ



    arccos(−



    n/2) 



    [Formula 1]

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