METHOD FOR FABRICATION OF FLOATING GATE IN SEMICONDUCTOR DEVICE
First Claim
1. A method for fabricating a floating gate of a semiconductor device, comprising:
- forming a tunnel oxide layer over a semiconductor substrate;
forming a polysilicon layer over a top surface of the tunnel oxide layer;
forming a photosensitive film pattern, which is used to fabricate a floating gate, over a top surface of the polysilicon layer;
depositing a by-product over the photosensitive pattern to form a by-product mask; and
etching the polysilicon layer, using the by-product mask as an etching mask to etch the polysilicon layer, completing fabrication of the floating gate.
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Abstract
A method for manufacturing a floating gate includes: forming a tunnel oxide film on a semiconductor substrate; forming a polysilicon layer on a surface of the tunnel oxide film; forming a photosensitive film pattern on a surface of the polysilicon layer; depositing a by-product on the photosensitive film to generate a by-product mask; and using the by-product mask as an etching mask to etch the polysilicon layer, completing fabrication of the floating gate. The polysilicon layer may be etched by a simplified process using a by-product mask so as to fabricate the floating gate, the etch rate of the polysilicon layer may be increased to improve productivity, poly bridge problems may be eliminated, and total amount of a gas used in etching the polysilicon layer may be reduced, resulting in an increase in hardware margin and a decrease in the amount of the gas used in this method.
5 Citations
20 Claims
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1. A method for fabricating a floating gate of a semiconductor device, comprising:
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forming a tunnel oxide layer over a semiconductor substrate; forming a polysilicon layer over a top surface of the tunnel oxide layer; forming a photosensitive film pattern, which is used to fabricate a floating gate, over a top surface of the polysilicon layer; depositing a by-product over the photosensitive pattern to form a by-product mask; and etching the polysilicon layer, using the by-product mask as an etching mask to etch the polysilicon layer, completing fabrication of the floating gate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification