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Method of Etching a High Aspect Ratio Contact

  • US 20090176375A1
  • Filed: 01/04/2008
  • Published: 07/09/2009
  • Est. Priority Date: 01/04/2008
  • Status: Active Grant
First Claim
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1. A method of etching an opening in a dielectric layer, comprising:

  • forming a plasma etching gas from C4F6, C4F8 or a mixture of C4F6 and C4F8, an oxygen source gas, an inert gas, and C2F4; and

    etching the opening through the dielectric layer to an underlying substrate with said plasma etching gas, wherein a conformal polymer layer is maintained along sidewalls of the opening during said etching.

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