FIELD EFFECT TRANSISTOR WITH AMORPHOUS OXIDE LAYER CONTAINING MICROCRYSTALS
First Claim
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1. An amorphous oxide comprising a microcrystal and having an electron carrier concentration of less than 1018/cm3, wherein the grain boundary of the microcrystal is covered with an amorphous structure
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Abstract
A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.
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Citations
21 Claims
- 1. An amorphous oxide comprising a microcrystal and having an electron carrier concentration of less than 1018/cm3, wherein the grain boundary of the microcrystal is covered with an amorphous structure
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5. (canceled)
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6. (canceled)
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7. (canceled)
- 8. An amorphous oxide wherein electron mobility increases as electron carrier concentration increases whose composition changes in a layer thickness direction and having an electron carrier concentration of less than 1018/cm3.
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12. (canceled)
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13. (canceled)
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14. An amorphous oxide whose composition changes in a layer thickness direction, wherein electron mobility increases as electron carrier concentration increases.
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15. (canceled)
- 16. An amorphous oxide comprising one type of element or a plurality of elements selected from the group consisting of Li, Na, Mn, Ni, Pd, Cu, Cd, C, N, P, Ti, Zr, V, Ru, Ge, Sn, and F and having an electron carrier concentration of less than 1018/cm3.
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20. An amorphous oxide comprising at least one element selected from group consisting of Li, Na, Mn, Ni, Pd, Cu, Cd, C, N, P, Ti, Zr, V, Ru, Ge, Sn, and F, wherein electron mobility increases as electron carrier concentration increases.
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21. (canceled)
Specification