CMOS image sensor and method for fabricating the same
First Claim
1. A CMOS image sensor comprising:
- a second conductive type semiconductor substrate having an active region and a device isolation region defined therein, wherein the active region has a photodiode region and a transistor region defined therein;
a device isolating film in the semiconductor substrate of the device isolation region;
a lightly doped first conductive type impurity region in the semiconductor substrate of the photodiode region, the lightly doped first conductive type impurity region being spaced a distance from the device isolation film;
a medium concentration second conductive type impurity region at a surface of the lightly doped first conductive type impurity region; and
a heavily doped second conductive type impurity region adjacent to the device isolation film in the photodiode region of the substrate, the heavily doped second conductive type impurity region having a width the same as a depth of the medium concentration second conductive type impurity region.
4 Assignments
0 Petitions
Accused Products
Abstract
CMOS image sensor and method for fabricating the same, the CMOS image sensor including a second conductive type semiconductor substrate having an active region and a device isolation region defined therein, wherein the active region has a photodiode region and a transistor region defined therein, a device isolating film in the semiconductor substrate of the device isolation region, a first conductive type impurity region in the semiconductor substrate of the photodiode region, the first conductive type impurity region being spaced a distance from the device isolation film, and a second conductive type first impurity region in the semiconductor substrate between the first conductive type impurity region and the device isolation film, thereby reducing generation of a darkcurrent at an interface between the photodiode region and a field region.
-
Citations
18 Claims
-
1. A CMOS image sensor comprising:
-
a second conductive type semiconductor substrate having an active region and a device isolation region defined therein, wherein the active region has a photodiode region and a transistor region defined therein; a device isolating film in the semiconductor substrate of the device isolation region; a lightly doped first conductive type impurity region in the semiconductor substrate of the photodiode region, the lightly doped first conductive type impurity region being spaced a distance from the device isolation film; a medium concentration second conductive type impurity region at a surface of the lightly doped first conductive type impurity region; and a heavily doped second conductive type impurity region adjacent to the device isolation film in the photodiode region of the substrate, the heavily doped second conductive type impurity region having a width the same as a depth of the medium concentration second conductive type impurity region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
-
Specification