DEVICE STRUCTURES FOR A METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND METHODS OF FABRICATING SUCH DEVICE STRUCTURES
First Claim
1. A device structure carried on an insulating layer, the device structure comprising:
- a semiconductor body including a source, a drain, and a channel disposed between the source and the drain, the channel having a first sidewall that extends toward the insulating layer;
a gate electrode having a second sidewall that extends toward the insulating layer; and
a gate dielectric layer disposed between the semiconductor body and the gate electrode, the gate dielectric intersecting the insulating layer, and the gate dielectric layer composed of a dielectric material that electrically isolates the gate electrode from the channel.
3 Assignments
0 Petitions
Accused Products
Abstract
Device structures for a metal-oxide-semiconductor field effect transistor (MOSFET) that is suitable for operation at relatively high voltages and methods of forming same. The MOSFET, which is formed using a semiconductor-on-insulator (SOI) substrate, includes a channel in a semiconductor body that is self-aligned with a gate electrode. The gate electrode and semiconductor body, which are both formed from the monocrystalline SOI layer of the SOI substrate, are separated by a gap that is filled by a gate dielectric layer. The gate dielectric layer may be composed of thermal oxide layers grown on adjacent sidewalls of the semiconductor body and gate electrode, in combination with an optional deposited dielectric material that fills the remaining gap between the thermal oxide layers.
111 Citations
17 Claims
-
1. A device structure carried on an insulating layer, the device structure comprising:
-
a semiconductor body including a source, a drain, and a channel disposed between the source and the drain, the channel having a first sidewall that extends toward the insulating layer; a gate electrode having a second sidewall that extends toward the insulating layer; and a gate dielectric layer disposed between the semiconductor body and the gate electrode, the gate dielectric intersecting the insulating layer, and the gate dielectric layer composed of a dielectric material that electrically isolates the gate electrode from the channel. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A method of fabricating a device structure on an insulating layer, the method comprising:
-
forming a first semiconductor body with a first sidewall that extends toward the insulating layer; forming a second semiconductor body having a second sidewall that extends toward the insulating layer; doping the first semiconductor body to form a source and a drain; forming a gate dielectric layer extending to the insulating layer at a location between the first sidewall of the first semiconductor body and the second sidewall of the second semiconductor body; and partially removing the second semiconductor body to define a gate electrode configured to control carrier flow in a channel between the source and the drain of the first semiconductor body. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17)
-
Specification