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DEVICE STRUCTURES FOR A METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND METHODS OF FABRICATING SUCH DEVICE STRUCTURES

  • US 20090179266A1
  • Filed: 01/11/2008
  • Published: 07/16/2009
  • Est. Priority Date: 01/11/2008
  • Status: Active Grant
First Claim
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1. A device structure carried on an insulating layer, the device structure comprising:

  • a semiconductor body including a source, a drain, and a channel disposed between the source and the drain, the channel having a first sidewall that extends toward the insulating layer;

    a gate electrode having a second sidewall that extends toward the insulating layer; and

    a gate dielectric layer disposed between the semiconductor body and the gate electrode, the gate dielectric intersecting the insulating layer, and the gate dielectric layer composed of a dielectric material that electrically isolates the gate electrode from the channel.

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