Trench Sidewall Protection by a Carbon-Rich Layer in a Semiconductor Device
First Claim
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1. A semiconductor device, comprising:
- a silicon layer; and
a dielectric layer disposed on the silicon layer and having a first trench and a second trench disposed such that a region of the dielectric layer exists between the first and second trenches, wherein the first and second trench each contains a metal and has a sidewall having a carbon concentration higher than a carbon concentration of the region of the dielectric layer.
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Abstract
When forming a trench in a porous low-K dielectric (such as an ILD) of a semiconductor device, a carbon-rich layer is formed in the sidewalls of the trench during trench etching. This carbon-rich layer may protect the trench from being excessively etched, which would otherwise form an undesirable hardmask undercut. The carbon-rich layer may be formed simultaneously with and during the etching process, by increasing the amount of carbon available to be absorbed by the ILD during the trench etching process. The existence of the extra available carbon may slow the etching of the carbon-enriched regions of the dielectric.
174 Citations
16 Claims
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1. A semiconductor device, comprising:
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a silicon layer; and a dielectric layer disposed on the silicon layer and having a first trench and a second trench disposed such that a region of the dielectric layer exists between the first and second trenches, wherein the first and second trench each contains a metal and has a sidewall having a carbon concentration higher than a carbon concentration of the region of the dielectric layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for manufacturing a semiconductor device, comprising:
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providing a silicon layer with a dielectric layer disposed on the silicon layer; etching a first trench in the dielectric layer such that a carbon concentration of a sidewall of the first trench has a carbon concentration higher than a region of the dielectric layer; and forming a metal layer in the first trench. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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Specification