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Trench Sidewall Protection by a Carbon-Rich Layer in a Semiconductor Device

  • US 20090179300A1
  • Filed: 01/14/2008
  • Published: 07/16/2009
  • Est. Priority Date: 01/14/2008
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a silicon layer; and

    a dielectric layer disposed on the silicon layer and having a first trench and a second trench disposed such that a region of the dielectric layer exists between the first and second trenches, wherein the first and second trench each contains a metal and has a sidewall having a carbon concentration higher than a carbon concentration of the region of the dielectric layer.

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