PROGRAMMABLE ELECTRONIC FUSE
First Claim
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1. A programmable device, comprising:
- a substrate;
an insulator on said substrate;
an elongated semiconductor material on said insulator, said elongated semiconductor material having a first end, a second end, a fuse link between the ends, and an upper surface.wherein said semiconductor material includes a dopant having a concentration of at least 10*17/cc,said first end is wider than said second end, anda metallic material is disposed on said upper surface, said metallic material being physically migratable along said upper surface responsive to an electrical current I flowable through said semiconductor material and through said metallic material.
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Abstract
A programmable device (eFuse), includes: a substrate (10); an insulator (13) on the substrate; an elongated semiconductor material (12) on the insulator, the elongated semiconductor material having a first end (12a), a second end (12b), a fuse link (11) between the ends, and an upper surface S. The semiconductor material includes a dopant having a concentration of at least 10*17/cc. The first end (12a) is wider than the second end (12b), and a metallic material is disposed on the upper surface. The metallic material is physically migratable along the upper surface responsive to an electrical current I flowable through the semiconductor material and through the metallic material.
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Citations
15 Claims
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1. A programmable device, comprising:
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a substrate; an insulator on said substrate; an elongated semiconductor material on said insulator, said elongated semiconductor material having a first end, a second end, a fuse link between the ends, and an upper surface. wherein said semiconductor material includes a dopant having a concentration of at least 10*17/cc, said first end is wider than said second end, and a metallic material is disposed on said upper surface, said metallic material being physically migratable along said upper surface responsive to an electrical current I flowable through said semiconductor material and through said metallic material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A programmable device for reliably achieving a post-programming resistance greater than 5 Kohms, said programmable device comprising:
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a substrate; an insulator on said substrate; an elongated semiconductor material having a constant first thickness and disposed on said insulator, said elongated semiconductor material having a first end, a second end, a fuse link between the ends, and an upper surface; a metallic material having a constant second thickness and disposed on said upper surface; and at least one programming transistor configured to supply an electrical current, I, having a magnitude between a first value and a second value through said elongated semiconductor material and through said metallic material; wherein said semiconductor material includes a dopant of one conductivity type at a concentration of at least 1017 dopants/cc, while not including any dopant of an opposite conductivity type;
said first end is wider than said second end, and said metallic material being physically migratable along said upper surface responsive to said electrical current;
wherein said first value is set between a first range of current level that causes a post-program resistance distribution that is wide and on a low side of approximately 5 Kohms and a second range of current level that causes said post-program resistance to be greater than 5 Kohms and tightly distributed without any rupture in said elongated semiconductor material; and
wherein said second value is set between said second range of current level and a third range of current level that ruptures said elongated semiconductor material and said post-program resistance shows a two mode distribution.
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Specification