RF Filter Device
First Claim
1. An integrated filter device for an implantable element, the device comprising:
- at least one filter component including N-circuit layers, N being an integer greater than or equal to one, each of the N-circuit layers including a first dielectric material having a first conductive material disposed thereon, the first dielectric material being characterized by a relatively low dielectric constant, the first conductive material being characterized by a relatively high electrical conductivity and arranged in a predetermined pattern on a surface of the first dielectric material of each of the N-circuit layers, the first conductive material on each of the N-circuit layers being coupled to the first conductive material disposed on an adjacent layer of the N-circuit layers such that the N-circuit layers form an inductor disposed in parallel with a first capacitance; and
at least one tuning element coupled to the at least one filter component and configured to tune the at least one filter component to resonate at a predetermined selected resonance frequency, the at least one tuning element including a second dielectric material characterized by a relatively high dielectric constant, a dimension of the at least one tuning element and the predetermined selected resonance frequency being a function of a ratio of the high dielectric constant over the low dielectric constant.
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Accused Products
Abstract
The present invention is directed to an integrated filter device for an implantable element. The device includes at least one filter component having N-circuit layers, N being an integer greater than or equal to one. Each of the N-circuit layers includes a first dielectric material having a first conductive material disposed thereon, the first dielectric material being characterized by a relatively low dielectric constant. The first conductive material is characterized by a relatively high electrical conductivity and arranged in a predetermined pattern on a surface of the first dielectric material of each of the N-circuit layers. The first conductive material on each of the N-circuit layers is coupled to the first conductive material disposed on an adjacent layer of the N-circuit layers such that the N-circuit layers form an inductor disposed in parallel with a first capacitance. At least one tuning element is coupled to the at least one filter component and configured to tune the at least one filter component to resonate at a predetermined selected resonance frequency. The at least one tuning element includes a second dielectric material characterized by a relatively high dielectric constant. A dimension of the at least one tuning element and the predetermined selected resonance frequency are a function of a ratio of the high dielectric constant over the low dielectric constant.
41 Citations
48 Claims
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1. An integrated filter device for an implantable element, the device comprising:
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at least one filter component including N-circuit layers, N being an integer greater than or equal to one, each of the N-circuit layers including a first dielectric material having a first conductive material disposed thereon, the first dielectric material being characterized by a relatively low dielectric constant, the first conductive material being characterized by a relatively high electrical conductivity and arranged in a predetermined pattern on a surface of the first dielectric material of each of the N-circuit layers, the first conductive material on each of the N-circuit layers being coupled to the first conductive material disposed on an adjacent layer of the N-circuit layers such that the N-circuit layers form an inductor disposed in parallel with a first capacitance; and at least one tuning element coupled to the at least one filter component and configured to tune the at least one filter component to resonate at a predetermined selected resonance frequency, the at least one tuning element including a second dielectric material characterized by a relatively high dielectric constant, a dimension of the at least one tuning element and the predetermined selected resonance frequency being a function of a ratio of the high dielectric constant over the low dielectric constant. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35)
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36. A method for making a miniaturized integrated filter device for an implantable element, the method comprising:
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a) providing N-layers of dielectric material, the dielectric material being characterized by a relatively low dielectric constant, N being an integer value greater than or equal to one; b) disposing a first conductive material on each of the N-layers of dielectric material to form N-circuit layers, the first conductive material being characterized by a relatively high electrical conductivity and arranged in a predetermined pattern on a surface of the first dielectric material; c) integrating the N-circuit layers to form an inductor disposed in parallel with a first capacitance; and d) providing at least one tuning element either before the step of integrating or after the step of integrating to form a filter component, the at least one at least one tuning element including a second dielectric material characterized by a relatively high dielectric constant and configured to tune the filter component to resonate at a predetermined selected resonance frequency, a dimension of the at least one tuning element and the predetermined selected resonance frequency being a function of a ratio of the high dielectric constant over the low dielectric constant. - View Dependent Claims (37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48)
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Specification