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SEMICONDUCTOR MEMORY DEVICE WITH THREE-DIMENSIONAL ARRAY AND REPAIR METHOD THEREOF

  • US 20090180339A1
  • Filed: 12/17/2008
  • Published: 07/16/2009
  • Est. Priority Date: 01/15/2008
  • Status: Active Grant
First Claim
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1. A nonvolatile memory device, comprising:

  • a three-dimensional (3D) cell array comprising a plurality of cell arrays located in a corresponding plurality of stacked substrate layers, the cell arrays sharing a bit line;

    a column selection circuit selecting a memory unit included in the 3D cell array; and

    a fuse block controlling the column selection circuit to repair a plurality of defective columns with one of a plurality of redundant bit lines located in the 3D cell array.

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